Effects of Pre-annealing on the Performance of Solution-processed Indium Zinc Oxide Thin-film Transistors

Fei Shan; Sung-Jin Kim

doi:10.5573/JSTS.2018.18.3.315

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대한전자공학회
JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE 학술저널
Journal of Semiconductor Technology and Science Vol.18 No.3
2018.6 315 - 320 (6page)
DOI : 10.5573/JSTS.2018.18.3.315

저자정보

Fei Shan (Chungbuk National University)
Sung-Jin Kim (Chungbuk National University)

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초록·키워드

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We report on thin-film transistors (TFTs) with indium zinc oxide (IZO) channel layers fabricated via a pre-annealing process at various temperatures. The solution-processed IZO semiconductor matched the pre-annealing well at temperatures as low as 120 °C, and showed good performance: field-effect mobility of 7.9 ㎠/Vs, threshold voltage of 1.4 V, subthreshold slope of 0.48 V/dec, and a current on/off ratio of 2.9 x 10⁷. To investigate the static response of IZO TFTs with preannealing at 120 °C, simple resistor load–type inverters were fabricated by connecting a resistor (10 MΩ).

#IZO thin-film transistors #preannealing process #solution-processed #sol-gel #electrical properties

참고문헌 (78)

참고문헌 신청

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