| 나노 적층 구조를 응용한 저항성 기반 비휘발성 메모리 소자 특성 제어 |
| 유일환, 황진하 |
| 홍익대학교 신소재공학과 |
| Control of Charge Transports in Nonvolatile Resistive Memory Devices through Embedded Nanoscale Layers |
| Yil-Hwan You, Jin-Ha Hwang |
| Department of Materials Science and Engineering, Hongik University |
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| ABSTRACT |
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Nickel oxide thin films exhibit the resistive switching as a function of applied voltages. The switching phenomena involve low and high resistance states after electroforming. The electrical features are believed to be associated with the formation and rupture of filaments. The set and reset behaviors are controlled by the oxidation and reduction of filaments. The indirect evidence of filaments is corroborated by the presence of nanocrystalline nickel oxides found in high-resolution transmission electron microscopy. The insertion of insulating layers seems to control the current-voltage characteristics by preventing the continuous formation of conductive filaments, potentially leading to artificial control of resistive behaviors in NiO-based systems. |
| Key words:
Resistive Switching, Nickel oxide, Filaments, Insulating layers |
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