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HomeSolid State PhenomenaSolid State Phenomena Vol. 312The Influence of Temperature on the Lateral...

The Influence of Temperature on the Lateral Photovoltaic Effect in the Fe₃O₄/SiO₂/n-Si Structure

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Abstract:

We report on the results of a study of the lateral photovoltaic effect in the Fe₃O₄/SiO₂/n-Si(001) structure at temperatures of 300 and 122 K under continuous and pulsed illumination. It is found that when the temperature changes from 300 to 122 K, the LPE sensitivity decreases from 112 to 65 mV/mm. At pulsed illumination, an increase of rise time and a fall time is observed with decreasing temperature. From a consideration of the energy band diagrams and equivalent circuits of the Fe₃O₄/SiO₂/n-Si structure, it is assumed that the detected temperature effects of LPE are due to the strong dependence of the magnetite film resistance on temperature.

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Physics and Technology of Nanostructured Materials V

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Periodical:

Solid State Phenomena (Volume 312)

Pages:

92-97

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.312.92

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Online since:

November 2020

Authors:

Tatiana A. Pisarenko*, Vladimir V. Korobtsov, Vyacheslav V. Balashev, Artem A. Dimitriev

Keywords:

Built-In Electrical Field, Lateral Photovoltaic Effect, Magnetite, Metal-Oxide-Semiconductor Structure, Photoresponse, Silicon

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