Low Temperature SiGe Steam Oxide - Aqueous Hf and NH3/NF3 Remote Plasma Etching and its Implementation as Si GAA Inner Spacer
p.126
p.126
RMG Patterning by Digital Wet Etching of Polycrystalline Metal Films
p.132
p.132
Wet Etchants Penetration through Photoresist during Wet Patterning
p.141
p.141
Is Highly Selective Si3N4/SiO2 Etching Feasible without Phosphoric Acid?
p.147
p.147
Self-Aligned Contacting Processes for the 80 nm p-MTJ Device Fabrication by Wet Approach
p.152
p.152
Drying Stability and Critical Height of Repeating Line/Space Structures
p.161
p.161
Fixed Charge Control of Silylated Surface for Stiction-Free Drying with Surface Energy Reduction Process
p.168
p.168
Exploring Wetting Dynamics on Superhydrophobic Nanopatterned Surfaces Using ATR-FTIR
p.175
p.175
Effect of 1-D Nano-Confinement on the Kinetics of a Click-Chemistry Surface Reaction Used in Biosensors
p.182
p.182
Self-Aligned Contacting Processes for the 80 nm p-MTJ Device Fabrication by Wet Approach
Abstract:
In this work, a novel process integration scheme for p-MTJ devices’ passivation and contacting was proposed. The method can efficiently protect the ferromagnetic metals and the magnesium oxide which are the key building block of p-MTJs, and effectively make electrical contact with the interconnect metals for p-MTJs. The scheme consists of passivation of p-MTJs with dual dielectrics - silicon nitride and silicon oxide, followed by planarization and selective wet etch. The proposed integration scheme was successfully demonstrated with 80 nm size p-MTJ devices.
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Info:
Periodical:
Solid State Phenomena (Volume 282)
Pages:
152-157
Citation:
Online since:
August 2018
Keywords:
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