Photo Lithography - Surface Preparation Interactions

Philippe Garnier

doi:10.4028/www.scientific.net/SSP.219.177

Paper Titles

Particle Measurement with a Liquid-Borne Particle Counter: Analytical Figures of Merit
p.157

Fluid Flow and Defect Density Considerations when Drying Bumped Wafers Using Spin and Surface Tension Gradient Methods
p.161

Characterization of Cavitation in Ultrasonic or Megasonic Irradiated Gas Saturated Solutions Using a Hydrophone
p.165

Detection of HO₂•/O₂•^- Radicals Formed in Aqueous Solutions Irradiated with Megasonic Waves Using a Cavitation Threshold (CT) Cell Set-Up
p.170

Photo Lithography - Surface Preparation Interactions
p.177

Study of Etchants’ Diffusion into a 248 nm Deep UV Photoresist during a Wet Etch
p.183

Megasonic Enhanced Photoresist Strip with DiO₃
p.187

Wetting Behavior of Plasma Etch Residue Removal Solutions on Plasma Damaged and Repaired Porous ULK Dielectrics
p.193

Effect of Downstream Plasma Treatment on Dissolution of Fluorocarbon Polymer in Organic Solvents
p.197

HomeSolid State PhenomenaSolid State Phenomena Vol. 219Photo Lithography - Surface Preparation...

Photo Lithography - Surface Preparation Interactions

Abstract:

More than one third of process operations consist in surface preparations in the integrated circuits’ manufacturing. Most of them are directly or indirectly linked with photo lithography. This paper deals with these interactions.

You might also be interested in these eBooks

Ultra Clean Processing of Semiconductor Surfaces XII

View Preview

Info:

Periodical:

Solid State Phenomena (Volume 219)

Pages:

177-182

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.219.177

Citation:

Cite this paper

Online since:

September 2014

Authors:

Philippe Garnier*

Keywords:

AFM, High Dose Implantation Resist Strip, Micro Masking, Photo Lithography, Photoresist Adhesion, Wafer Charging, Watermark

Export:

RIS, BibTeX

Price:

Permissions:

Request Permissions

* - Corresponding Author

References

[1] JP. Carrere, Microelectronic Engineering, 2007; 84(9): 2109-2112.

Google Scholar

[2] S. Chooi, 2003, Solid State Phenomena, 92, 85.

Google Scholar

[3] A. Beverina, Solid State Phenomena Vol. 92 pp.235-238.

Google Scholar

[4] P. Garnier, ECS transactions 11 (2) p.257 – 264 (2007).

Google Scholar

[5] P. Garnier, Solid State Phenomena Vols. 145-146 (2009) pp.219-222.

Google Scholar

[6] PonJee, J. Vac. Sci. Tech, Vol. 8, No. 3, May/Jun (1990).

Google Scholar

[7] A. Kawai, Jpn J. Appl. Phys. Vol. 39 (2000) pp.1426-1429.

Google Scholar

[8] M. Kurihara, Jpn J. of App. Phys 48 (2009).

Google Scholar

[9] P. Garnier et al., ECS Trans. 2011 volume 41, issue 5, 253-256.

Google Scholar