Power Loss Comparison in a BOOST PFC Circuit Considering the Reverse Recovery of the Forward Diode

Wei Hua Shao; Xiao Ling Li; Hua Ping Jiang; Xuan Guo; Zheng Zeng; Li Ran; Phillip Mawby

doi:10.4028/www.scientific.net/MSF.963.873

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Power Loss Comparison in a BOOST PFC Circuit Considering the Reverse Recovery of the Forward Diode
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HomeMaterials Science ForumMaterials Science Forum Vol. 963Power Loss Comparison in a BOOST PFC Circuit...

Power Loss Comparison in a BOOST PFC Circuit Considering the Reverse Recovery of the Forward Diode

Abstract:

The nature of diode reverse recovery is analyzed in this paper, and the reverse recovery loss is evaluated in a BOOST PFC converter using a silicon (Si) or silicon carbide (SiC) diode in the forward branch. Mathematical models of the forward conduction and reverse recovery losses are established to assess the influence of Si and SiC diodes. To characterize and quantify the losses related to diode reverse recovery, an 85~265V AC to 400V DC, 2kW BOOST PFC prototype is built with switching frequencies of 65kHz. It is found that the reverse-recovery inherent in a Si diode cannot be neglected. The switching loss is substantially smaller when the diode is a SiC one. In order to investigate further, a double pulse test rig is established, with the switch and the diode being either Si or SiC. The experimental results demonstrate that with a SiC diode, not only the diode conduction losses but also the transistor turn-on loss is greatly reduced.

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Periodical:

Materials Science Forum (Volume 963)

Pages:

873-877

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.963.873

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Online since:

July 2019

Authors:

Wei Hua Shao*, Xiao Ling Li, Hua Ping Jiang, Xuan Guo, Zheng Zeng, Li Ran, Phillip Mawby

Keywords:

BOOST PFC, Forward Diode, Power Loss Comparison, Reverse Recovery

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* - Corresponding Author

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