Continuous Growth of Buffer/Drift Epitaxial Stack Based on 4H-SiC by Quick Change of N2 Flow Rate under High Growth Rate Condition
p.97
p.97
Repeatability of Epitaxial Growth of n-Type 4H-SiC Films by High Speed Wafer Rotation Vertical CVD Tool
p.101
p.101
Extensive 99% Killer Defect Free 4H-SiC Epitaxial Layer toward High Current Large Chip Devices
p.105
p.105
Influence of Substrate Properties on the Defectivity and Minority Carrier Lifetime in 4H-SiC Homoepitaxial Layers
p.109
p.109
Basal Plane Dislocation Conversion Enhancement in 4H-SiC Homo-Epitaxial Layers by Ion Implantation into the Wafer
p.114
p.114
Effect of Surface Etching Conditions on Stacking Faults in 4H-SiC Epitaxy
p.119
p.119
New SiC Epitaxial Growth Process with up to 100% BPD to TED Defect Conversion on 150mm Hot-Wall CVD Reactor
p.123
p.123
Germanium Incorporation in Silicon Carbide Epitaxial Layers Using Molecular Beam Epitaxy on 4H-SiC Substrates
p.127
p.127
A Study of CVD Growth Parameters to Fill 50-μm-Deep 4H-SiC Trenches
p.131
p.131
Basal Plane Dislocation Conversion Enhancement in 4H-SiC Homo-Epitaxial Layers by Ion Implantation into the Wafer
Abstract:
We studied the impact of ion implantation into the wafer substrate prior to the epitaxy process on the basal plane dislocation conversion behavior during epitaxial layer growth. Defect density measurements show an enhancing effect of the ion implantation on the basal plane dislocation to threading edge dislocation conversion. Analysis of the lateral conversion distribution, the stress field in the material as well as the wafer topography at the onset of epitaxial growth lead us to believe, that stresses in the epitaxy layer cause the enhanced basal plane dislocation conversion.
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Info:
Periodical:
Materials Science Forum (Volume 963)
Pages:
114-118
Citation:
Online since:
July 2019
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