Simulations of Heterostructures Based on 3C-4H and 6H-4H Silicon Carbide Polytypes
p.302
p.302
Structural Quality, Polishing and Thermal Stability of 3C-SiC/Si Templates
p.306
p.306
THz Emission from SiC Natural Superlattice Diodes Induced by Strong Electrical Field
p.310
p.310
Infrared Reflectance Study of the Graphene/Semi-Insulating 6H-SiC(0001) Heterostructure
p.314
p.314
Influence of Aluminum Incorporation on Mechanical Properties of 3C-SiC Epilayers
p.318
p.318
Chemical Trend in Band Structure of 3d-Transition-Metal-Doped AlN Films
p.322
p.322
About the Electrical Activation of 1×1020 cm-3 Ion Implanted Al in 4H-SiC at Annealing Temperatures in the Range 1500 - 1950°C
p.333
p.333
Metal/Semiconductor Contacts to Silicon Carbide: Physics and Technology
p.339
p.339
Application of Si-Vapor Ambient Anneal for Post Ion Implantation Anneal and Simultaneous Improvement of Trench Sidewall Smoothness
p.345
p.345
Influence of Aluminum Incorporation on Mechanical Properties of 3C-SiC Epilayers
Abstract:
The silicon carbide cubic polytype (3C-SiC) is perfectly appropriate to fabricate microelectromechanical systems. However, for such applications, the stress can largely influence both the fabrication of 3C‑SiC‑based microsystems and their related mechanical properties. Accordingly, in this study, we investigated the influence of strong aluminum incorporation towards the mechanical properties of 3C-SiC epilayers grown on silicon substrates.
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Info:
Periodical:
Materials Science Forum (Volume 924)
Pages:
318-321
Citation:
Online since:
June 2018
Keywords:
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