Influence and Mutual Interaction of Process Parameters on the Z1/2 Defect Concentration during Epitaxy of 4H-SiC

Jürgen Erlekampf; Daniel Kaminzky; Katharina Rosshirt; Birgit Kallinger; Mathias Rommel; Patrick Berwian; Jochen Friedrich; Lothar Frey

doi:10.4028/www.scientific.net/MSF.924.112

Paper Titles

Quick and Practical Cleaning Process for Silicon Carbide Epitaxial Reactor
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Understanding the Chemistry in Silicon Carbide Chemical Vapor Deposition
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Triangular Defects Reduction and Uniformity Improvement of 4H-SiC Epitaxial Growth in a Planetary Reactor
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Reduction of Surface and PL Defects on n-Type 4H-SiC Epitaxial Films Grown Using a High Speed Wafer Rotation Vertical CVD Tool
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Influence and Mutual Interaction of Process Parameters on the Z_1/2 Defect Concentration during Epitaxy of 4H-SiC
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CVD Filling of Narrow Deep 4H-SiC Trenches in a Quasi-Selective Epitaxial Growth Mode
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Hot Filament CVD Growth of 4H-SiC Epitaxial Layers
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Stacking Faults Defects on 3C-SiC Homo-Epitaxial Films
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Silicon (001) Heteroepitaxy on 3C-SiC(001)/Si(001) Seed
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HomeMaterials Science ForumMaterials Science Forum Vol. 924Influence and Mutual Interaction of Process...

Influence and Mutual Interaction of Process Parameters on the Z_1/2 Defect Concentration during Epitaxy of 4H-SiC

Abstract:

The development of bipolar 4H-SiC devices for high blocking voltages requires the growth of high carrier lifetime epitaxial layers with low Z_1/2 concentrations. This paper shows a comprehensive investigation of the influence of epitaxial growth parameters (C/Si ratio and growth temperature) on Z_1/2 concentration and minority carrier lifetime. On the basis of a discovered exponential correlation of Z_1/2 with the C/Si ratio and growth temperature, a competitive low Z_1/2 concentration of 1.9∙10¹² cm^-3 could be achieved by lowering the growth temperature and switching to higher C/Si ratio. Thermodynamic considerations by an Arrhenius approach reveal a dependency of the formation enthalpy of Z_1/2 on the thermal process and process conditions of the epitaxial growth. Furthermore, the correlation between Z_1/2and the effective minority carrier lifetime confirms the occurrence of a necessary second recombination mechanism beside the common recombination at deep levels by Shockley-Read-Hall for low Z_1/2 concentration.