The Effect of Interfacial Charge on the Development of Wafer Bonded Silicon-on-Silicon-Carbide Power Devices

Peter M. Gammon; Fan Li; Chun W. Chan; Ana M. Sanchez; Steven A. Hindmarsh; Farzan Gity; Tanya Trajkovic; Valeria Kilchytska; Vasantha Pathirana; Gianluca Camuso; Khaled Ben Ali; Denis Flandre; Phillip Mawby; Julian W. Gardner

doi:10.4028/www.scientific.net/MSF.897.747

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Realization and Characterization of Carbonic Layers on 4H-SiC for Electrochemical Detections
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High Temperature Reliability Assessment and Degradation Analysis for Diamond Semiconductor Devices
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The Effect of Interfacial Charge on the Development of Wafer Bonded Silicon-on-Silicon-Carbide Power Devices
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HomeMaterials Science ForumMaterials Science Forum Vol. 897The Effect of Interfacial Charge on the...

The Effect of Interfacial Charge on the Development of Wafer Bonded Silicon-on-Silicon-Carbide Power Devices

Abstract:

A new generation of power electronic semiconductor devices are being developed for the benefit of space and terrestrial harsh-environment applications. 200-600 V lateral transistors and diodes are being fabricated in a thin layer of silicon (Si) wafer bonded to semi-insulating 4H silicon carbide (SiC) leading to a Si/SiC substrate solution that promises to combine the benefits of silicon-on-insulator (SOI) technology with that of SiC. Here, details of a process are given to produce thin films of silicon 1 and 2 μm thick on the SiC. Simple metal-oxide-semiconductor capacitors (MOS-Cs) and Schottky diodes in these layers revealed that the Si device layer that had been expected to be n-type, was now behaving as a p-type semiconductor. Transmission electron microscopy (TEM) of the interface revealed that the high temperature process employed to transfer the Si device layer from the SOI to the SiC substrate caused lateral inhomogeneity and damage at the interface. This is expected to have increased the amount of trapped charge at the interface, leading to Fermi pinning at the interface, and band bending throughout the Si layer.