Very High Sustainable Forward Current Densities on 4H-SiC p-n Junctions Formed by VLS Localized Epitaxy of Heavily Al-Doped p++ Emitters

Selsabil Sejil; Loic Lalouat; Mihai Lazar; Davy Carole; Christian Brylinski; François Jomard; Dominique Planson; Gabriel Ferro; Christophe Raynaud

doi:10.4028/www.scientific.net/MSF.897.63

Paper Titles

Analysis of Trench-Filling Epitaxial Growth of 4H-SiC Based on Continuous Fluid Approximation Including Gibbs-Thomson Effect
p.47

Carrier Lifetime Control of 4H-SiC Epitaxial Layers by Boron Doping
p.51

High-Quality 100/150 mm p-Type 4H-SiC Epitaxial Wafer for High-Voltage Bipolar Devices
p.55

Improvement of Quality of Thick 4H-SiC Epilayers
p.59

Very High Sustainable Forward Current Densities on 4H-SiC p-n Junctions Formed by VLS Localized Epitaxy of Heavily Al-Doped p⁺⁺ Emitters
p.63

V and Ti Doping in 4H-SiC Epitaxy for Reduction of Carrier Lifetimes
p.67

Hydrogen Etching Influence on 4H-SiC Homo-Epitaxial Layer for High Power Device
p.71

Investigation of Carrot Reduction Effect on 4H-Silicon Carbide Epitaxial Wafers with Optimized Buffer Layer
p.75

Influence of Growth Temperature on Site Competition Effects during Chemical Vapor Deposition of 4H-SiC Layers
p.79

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Very High Sustainable Forward Current Densities on 4H-SiC p-n Junctions Formed by VLS Localized Epitaxy of Heavily Al-Doped p⁺⁺ Emitters

Abstract:

This study deals with the electrical characterization of PiN diodes fabricated on a 4°off-axis 4H-SiC n⁺ substrate with a n^- epilayer (1×10¹⁶ cm^-3 / 10 µm). Optimized p⁺⁺ epitaxial areas were grown by Vapour-Liquid-Solid (VLS) transport to form p⁺ emitters localized in etched wells with 1 µm depth. Incorporated Al level in the VLS p⁺⁺ zones was checked by SIMS (Secondary Ion Mass Spectroscopy), and the doping level was found in the range of 1-3×10²⁰ at.cm^-3. Electrical characterizations were performed on these PiN diodes, with 800 nm deposit of aluminium as ohmic contact on p-type SiC. Electrical measurements show a bipolar behaviour, and very high sustainable forward current densities ≥ 3 kA.cm^-2, preserving a low leakage current density in reverse bias. These measurements were obtained on structures without any passivation and no edge termination.

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Materials Science Forum (Volume 897)

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63-66

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.897.63

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Online since:

May 2017

Authors:

Selsabil Sejil*, Loic Lalouat, Mihai Lazar, Davy Carole, Christian Brylinski, François Jomard, Dominique Planson, Gabriel Ferro, Christophe Raynaud

Keywords:

p⁺⁺ Doping, p-n Junction, p-Type Ohmic Contact, Roughness, Selective Epitaxy, Silicon Carbide (SiC), Vapor Liquid Solid (VLS)

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