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HomeMaterials Science ForumMaterials Science Forum Vol. 897Design Optimization of a High Temperature 1.2 kV...

Design Optimization of a High Temperature 1.2 kV 4H-SiC Buried Grid JBS Rectifier

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Abstract:

1.2 kV SiC buried grid junction barrier Schottky (BG-JBS) diodes are demonstrated. The design considerations for high temperature applications are investigated. The design is optimized in terms of doping concentration and thickness of the epilayers, as well as grid size and spacing dimensions, in order to obtain low on-resistance and reasonable leakage current even at high temperatures. The device behavior at temperatures ranging from 25 to 225^ºC is analyzed and measured on wafer level. At 100 A/cm² a forward voltage drop of 2 V at 25^ºC and 3 V at 225^ºC is achieved. At reverse voltage of 1 kV, a leakage current density below 0.1 µA/cm² and below 0.1 mA/cm² is measured at 25 and 225^ºC, respectively. This proves the effective shielding effect of the BG-JBS design and provides benefits in high voltage applications, particularly for high temperature operation.

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Silicon Carbide and Related Materials 2016

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Periodical:

Materials Science Forum (Volume 897)

Pages:

455-458

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.897.455

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Cite this paper

Online since:

May 2017

Authors:

Hossein Elahipanah*, Nicolas Thierry-Jebali, Sergey A. Reshanov, Wlodek Kaplan, A. Zhang, Jang Kwon Lim, Mietek Bakowski, Mikael Östling, Adolf Schöner

Keywords:

Buried Grid, High Temperature, High Voltage, Junction Barrier Schottky (JBS), Silicon Carbide (SiC)

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* - Corresponding Author

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