Paper Titles

Modeling of Stacking Fault Expansion Velocity of Body Diode in 4H-SiC MOSFET
p.214

Extension of Stacking Faults in 4H-SiC pn Diodes under a High Current Pulse Stress
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Detection of Crystal Defects in High Doped Epitaxial Layers and Substrates by Photoluminescence
p.222

Exploration of Bulk and Epitaxy Defects in 4H-SiC Using Large Scale Optical Characterization
p.226

Creation and Functionalization of Defects in SiC by Proton Beam Writing
p.233

Influence of n-Type Doping Levels on Carrier Lifetime in 4H-SiC Epitaxial Layers
p.238

New Efficient Canal of THz Emission from SiC Natural Superlattices in Conditions of Wannier-Stark Localization
p.242

Point Defects Investigation of High Energy Proton Irradiated SiC p⁺-i-n Diodes
p.246

New Evidence for the Second Conduction Band in 4H SiC
p.250

HomeMaterials Science ForumMaterials Science Forum Vol. 897Creation and Functionalization of Defects in SiC...

Creation and Functionalization of Defects in SiC by Proton Beam Writing

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Abstract:

Proton beam writing was carried out into high purity semi-insulating 4H-SiC bulk substrates. Luminescent defects created in the SiC by proton beam writing using 1.7 MeV-proton micro beams were investigated at room temperature using confocal laser scanning microscope. As a result, photoluminescence peak around 900 nm associated with silicon vacancy was observed for the irradiated SiC without post implantation process such as annealing. The overall depth profile of photon counts detected from irradiated areas is in good agreement with simulated vacancy depth profile. This suggests that silicon vacancy can be applied to ion tracking detector. In addition, since silicon vacancy is known as single photon source of which spins can be controlled at RT, PBW is expected to be a useful tool to fabricate spin qubits.

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Silicon Carbide and Related Materials 2016

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Periodical:

Materials Science Forum (Volume 897)

Pages:

233-237

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.897.233

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Online since:

May 2017

Keywords:

Defect Engineering, Photoluminescence, Proton Beam Writing, Silicon Vacancy (V_Si)

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[1] S. Castelletto, B. C. Johnson, V. Ivády, N. Stavrias, T. Umeda, A. Gali, T. Ohshima, Nature Materials 13 (2014) 151-156.

DOI: 10.1038/nmat3806

[2] D. J. Christle, A. L. Falk, P. Andrich, P. V. Klimov, J. U. Hassan, N. T. Son, E. Janzén, T. Ohshima, D. D. Awschalom, Nature Materials 14 (2015) 160-163.

DOI: 10.1038/nmat4144

[3] M. Widmann, S. Y. Lee, T. Rendler, N. T. Son, H. Fedder, S. Paik, L. P. Yang, N. Zhao, S. Yang, I. Booker, A. Denisenko, M. Jamali, S. A. Momenzadeh, I. Gerhardt, T. Ohshima, A. Gali, E. Janzen, J. Wrachtrup, Nature Materials 14 (2015) 164-168.

DOI: 10.1038/nmat4145

[4] F. Fuchs, B. Stender, M. Trupke, D. Simin, J. Pflaum, V. Dyakonov, G.V. Astakhov, Nat. Comm. 6 (2015) 7578.

DOI: 10.1038/ncomms8578

[5] A. Lohrmann, N. Iwamoto, Z. Bodrog, S. Castelletto, T. Ohshima, T. J. Karle, A. Gali, S. Prawer, J. C. McCallum, B. C. Johnson, Nature Communications 6 (2015) 7781.

DOI: 10.1038/ncomms8783

[6] A. Lohrmann, S. Castelletto, J. R. Klein, T. Ohshima, M. Bosi, M. Negri, D. W. M. Lau, B. C. Gibson, S. Prawer, J. C. McCallum, B. C. Johnson, Appl. Phys. Lett. 108 (2016) 021107.

DOI: 10.1063/1.4939906

[7] J. A. Van Kan, A. A. Bettiol, F. Watt, Nano Lett. 6 (2006) 579-582.

[8] F. Watt, M. B. H. Breese, A. A. Bettiol, J. A. Van Kan, Mater. Today 10 (2007) 20-29.

[9] N. Uchiya, T. Harada, M. Murai, H. Nishikawa, J. Haga, T. Sato, Y. Ishii, T. Kamiya, Nucl. Instr. and Meth. B 260 (2007) 405-408.

[10] S. Onoda, M. Haruyama, T. Teraji, J. Isoya, W. Kada, O. Hanaizumi, T. Ohshima, Phys. Status Solidi A 212 (2015) 2641–2644.

DOI: 10.1002/pssa.201532219

[11] Information on http: /www. taka. qst. go. jp/index_e. html.

[12] E. Janzen, A. Gali, P. Carlsson, A. Gallstrom, B. Magnusson, N. T. Son, Physica B 404 (2009) 4354-4358.

[13] A. Gruber, A. Drabenstedt, C. Tietz, L. Fleury, J. Wrachtrup, C. von Borczyskowski, Science 276 (1997) 2012-(2014).

[14] M. V. Gurudev Dutt, L. Childress, L. Jiang, E. Togan, J. Maze, F. Jelezko, A. S. Zibrov, P. R. Hemmer, M. D. Lukin, Science 316 (2007) 1312-1316.

DOI: 10.1126/science.1139831

[15] G. Waldherr, Y. Wang, S. Zaiser, M. Jamali, T. Schulte-Herbruggen, H. Abe, T. Ohshima, J. Isoya, J. F. Du, P. Neumann, J. Wrachtrup, Nature 506 (2014) 204-207.

DOI: 10.1038/nature12919

[16] Information on http: /www. srim. org.