Correlation between Local Strain Distribution and Microstructure of Grinding-Induced Damage Layers in 4H-SiC(0001)

Susumu Tsukimoto; Tatsuhiko Ise; Genta Maruyama; Satoshi Hashimoto; Tsuguo Sakurada; Junji Senzaki; Tomohisa Kato; Kazutoshi Kojima; Hajime Okumura

doi:10.4028/www.scientific.net/MSF.897.177

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HomeMaterials Science ForumMaterials Science Forum Vol. 897Correlation between Local Strain Distribution and...

Correlation between Local Strain Distribution and Microstructure of Grinding-Induced Damage Layers in 4H-SiC(0001)

Abstract:

Evaluation of surface damage layers formed by mechanical grinding processes is indispensable in epi-ready SiC wafer preparation. As well as microstructure, the analysis of local strain distribution in the damage layers gives a clue on control of the wafer quality. Advanced electron backscatter diffraction (EBSD) technique is applied to evaluate the strain distribution of the damage layers. It is revealed that the elastic strain distribution can be classified into a hierarchy of three regions with respect to depth from the surface. Combining EBSD analysis with TEM observation, large compressive elastic strain and misorientation are introduced in the highly-defective region underneath the ground wafer surface. In addition, the gradient distribution of the strain is observed clearly below the highly-defective region. The knowledge of correlating between strain distribution and microstructure is promising to control the damage layer for the wafer preparation.

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Silicon Carbide and Related Materials 2016

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Periodical:

Materials Science Forum (Volume 897)

Pages:

177-180

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.897.177

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Online since:

May 2017

Authors:

Susumu Tsukimoto*, Tatsuhiko Ise, Genta Maruyama, Satoshi Hashimoto, Tsuguo Sakurada, Junji Senzaki, Tomohisa Kato, Kazutoshi Kojima, Hajime Okumura

Keywords:

Damage Layer, Electron Backscatter Diffraction (EBSD), Grinding, Strain Analysis, TEM

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* - Corresponding Author

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