Post-Growth Micropipe Formation in 4H-SiC

Jeffrey Quast; Michael Dudley; Jian Qiu Guo; Darren Hansen; Ian Manning; Stephan Mueller; Balaji Raghothamachar; Edward Sanchez; Clinton Whiteley; Yu Yang

doi:10.4028/www.scientific.net/MSF.858.367

Paper Titles

Study of Nanoscale Inhomogeneities in Silicon Carbide Crystals via Small-Angle X-Ray Scattering
p.349

Surface Voltage and μPCD Mapping of Defect in Epitaxial SiC
p.353

Thermal Stability of Deep-Level Defects in High-Purity Semi-Insulating 4H-SiC Substrate Studied by Admittance Spectroscopy
p.357

Three-Dimensional Imaging of Extended Defects in 4H-SiC
p.361

Post-Growth Micropipe Formation in 4H-SiC
p.367

Observation of Pair Structures of Threading Dislocation and Surface Defect in 4H-SiC Wafer by Mirror Projection Electron Microscopy
p.371

Mapping of Threading Screw Dislocations in 4H n-Type SiC Wafers
p.376

Electrical Properties of Defects in 4H-SiC Investigated by Photo-Induced-Currents Measurements
p.380

Effects of Basal Plane Dislocation Density in 4H-SiC Substrate on Degradation of Body-Diode Forward Voltage
p.384

HomeMaterials Science ForumMaterials Science Forum Vol. 858Post-Growth Micropipe Formation in 4H-SiC

Post-Growth Micropipe Formation in 4H-SiC

Abstract:

Understanding the growth and propagation of defects in SiC remains of interest in an effort to continue to improve device performance. A post-growth boule heat-treatment revealed to form micropipe pairs from apparent single screw dislocations is reviewed. In the treated samples almost no 1c threading screw dislocations were found. Instead, micropipe pairs were observed in similar densities to 1c threading screw dislocations in non-heat treated samples. It is hypothesized that the elevated temperatures allowed for enhanced dislocation mobility, enabling the transition.

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Silicon Carbide and Related Materials 2015

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Periodical:

Materials Science Forum (Volume 858)

Pages:

367-370

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.858.367

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Online since:

May 2016

Authors:

Jeffrey Quast*, Michael Dudley, Jian Qiu Guo, Darren Hansen, Ian Manning, Stephan Mueller, Balaji Raghothamachar, Edward Sanchez, Clinton Whiteley, Yu Yang

Keywords:

4H Silicon Carbide, Defects, Dislocation, Micropipe, Threading Screw Dislocations (TSDs)

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