Elimination of BPD in 5~30um Thick 4H-SiC Epitaxial Layers Grown in a Warm-Wall Planetary Reactor
p.189
p.189
Formation and Reduction of Large Growth Pits on 100 mm 4° 4H-SiC
p.193
p.193
Hydrogen Flux Influence on Homo-Epitaxial 4H-SiC Doping Concentration Profile for High Power Application
p.197
p.197
Improvement on 150 mm 4H-SiC Epitaxial Wafer Quality
p.201
p.201
Optimization of VLS Growth Process for 4H-SiC P/N Junctions
p.205
p.205
Smooth 4H-SiC Epilayers Grown with High Growth Rates with Silane/Propane Chemistry Using 4° Off-Cut Substrates
p.209
p.209
Structure of Straight-Line Defect and its Effect on the Electrical Properties of Schottky Barrier Diodes
p.213
p.213
Study of Ehrlich-Schwoebel Barrier in 4H-SiC Epitaxial Growths by Molecular Statics Method
p.217
p.217
Study of In-Plane Orientation of Epitaxial Si Films Grown on 6H-SiC(0001)
p.221
p.221
Optimization of VLS Growth Process for 4H-SiC P/N Junctions
Abstract:
P/N junctions have been fabricated with N+ commercial 4H-SiC substrate on which Vapor-Liquid-Solid (VLS) selective epitaxy was used to create a localized p-type doping. The influence of the carrier gas nature (argon or hydrogen) has been investigated in terms of quality of the growth morphology, deposit thickness and electrical behavior of the P/N junction. Distinct results have been observed with a clear improvement when using VLS selective epitaxy under hydrogen.
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Info:
Periodical:
Materials Science Forum (Volume 858)
Pages:
205-208
Citation:
Online since:
May 2016
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