Temperature Dependence of Minority Carrier Lifetime in Epitaxially Grown p+-p–-n+ 4H-SiC Drift Step Recovery Diodes
p.632
p.632
4H-Silicon Carbide p-n Diode for High Temperature (600 °C) Environment Applications
p.636
p.636
Observation and Analysis of a Non-Uniform Avalanche Phenomenon in 4H-SiC 4°-Off (0001) p-n Diodes Terminated with a Floating-Field Ring
p.640
p.640
4H-SiC P+N UV Photodiodes for Space Applications
p.644
p.644
Characterization of 4H-SiC pn Structures with Unstable Excess Current
p.648
p.648
The Impact of Interface Charge on the Breakdown Voltage of Terminated 4H-SiC Power Devices
p.652
p.652
Robust Double-Ring Junction Termination Extension Design for High Voltage Power Semiconductor Devices Based on 4H-SiC
p.656
p.656
Industrial Approach for Next Generation of Power Devices Based on 4H-SiC
p.660
p.660
Proton and Electron Irradiation in Oxynitrided Gate 4H-SiC MOSFET: A Recent Open Issue
p.667
p.667
Characterization of 4H-SiC pn Structures with Unstable Excess Current
Abstract:
4H-SiC p+nn+ structures fabricated by implantation of Al into a commercial n-type 4H-SiC epitaxial layer doped to (3-5)1015cm-3 have been studied. Structures with unstable excess forward current were characterized by electron beam induced current (EBIC) and secondary electron (SE) methods and by Auger-electron spectroscopy (AES). Numerous defects were found with a depth which exceed the thickness of the p+-layer. Also, it was demonstrated that the concentration of carbon on the SiC surface always exceeds that of silicon, which may be the reason for the initially unstable conductivity via the defects.
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Info:
Periodical:
Materials Science Forum (Volumes 821-823)
Pages:
648-651
Citation:
Online since:
June 2015
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