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Paper Titles
Chlorine Trifluoride Gas Transport and Etching Rate Distribution in Silicon Carbide Dry Etcher
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Low Frequency Noise in 4H-SiC Schottky Diodes Under Forward Bias
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Si1-xCx/Si(001) Heterostructures for Use in Schottky Diode Rectifiers Demonstrating High Breakdown Voltage and Negligible Leakage Current

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Abstract:

Vertical Schottky diodes have been fabricated on low C content Si1-xCx and 3C-SiC epilayers epitaxially grown on Si(001) substrates. Significant leakage current was observed in 3C-SiC diodes under reverse bias, masking any rectifying behavior. This issue is far less pronounced in Si1-xCx based Schottky diodes which demonstrate a clear critical breakdown. Leakage current is shown to be greater in relaxed Si1-xCx layers. While crystalline Si1-xCx is not currently a viable material for high power electronics it is useful for assessing the impact lattice mismatch and crystalline quality has on the behavior of rectifiers.

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Info:

Periodical:

Materials Science Forum (Volumes 821-823)

Pages:

571-574

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.821-823.571

Citation:

Cite this paper

Online since:

June 2015

Authors:

Gerard Colston*, Maksym Myronov, Stephen Rhead, Vishal A. Shah, Yogesh Sharma, Phillip Mawby, David Leadley

Keywords:

3C-SiC, Breakdown Voltage, Leakage Current, Schottky Diode, Si1-xCx

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* - Corresponding Author

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