High-Speed Dicing of SiC Wafers by Femtosecond Pulsed Laser
p.524
p.524
Thermal Laser Separation – A Novel Dicing Technology Fulfilling the Demands of Volume Manufacturing of 4H-SiC Devices
p.528
p.528
Elimination of Microtrenching in Trenches in 4H-Silicon Carbide Using Shadow Masking
p.533
p.533
Planarization of 6-Inch 4H-SiC Wafer Using Catalyst-Referred Etching
p.537
p.537
Removal of Mechanical-Polishing-Induced Surface Damages on 4H-SiC by Chemical Etching and its Effect on Subsequent Epitaxial Growth
p.541
p.541
Effect of Surface Damage on SiC Wafer Shape
p.545
p.545
Planarization of Epitaxial SiC Trench Structures by Plasma Ion Etching
p.549
p.549
Chlorine Trifluoride Gas Transport and Etching Rate Distribution in Silicon Carbide Dry Etcher
p.553
p.553
Low Frequency Noise in 4H-SiC Schottky Diodes Under Forward Bias
p.559
p.559
Removal of Mechanical-Polishing-Induced Surface Damages on 4H-SiC by Chemical Etching and its Effect on Subsequent Epitaxial Growth
Abstract:
To remove the surface damages induced during mechanical polishing (MP) of 4H-SiC, a variety of wet etching recipes and etching conditions were studied. By evaluating the epilayers grown on these etching-treated wafers, it has been found that triangular defects (TRDs) are the main defects originated from the MP-induced damages in these samples. High temperature molten KCl etching at 1100 °C with KOH additive is very effective to remove the damaged surface while keeping a relatively flat surface. Epilayer grown on the KCl+KOH etched wafer showed a TRD density <0.9 cm-2.
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Info:
Periodical:
Materials Science Forum (Volumes 821-823)
Pages:
541-544
Citation:
Online since:
June 2015
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