Impact of Design on Electrical Characteristics of 3.5 kV 4H-SiC JBS Diode

Pierre Brosselard; Florian Chevalier; Benjamin Proux; Nicolas Thierry-Jebali; Pascal Bevilacqua; Dominique Tournier; Dominique Planson; Gregory Grosset; Lionel Dupuy

doi:10.4028/www.scientific.net/MSF.806.117

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HomeMaterials Science ForumMaterials Science Forum Vol. 806Impact of Design on Electrical Characteristics of...

Impact of Design on Electrical Characteristics of 3.5 kV 4H-SiC JBS Diode

Abstract:

This work reports on the fabrication and electrical characterization of 3 different diodes. The first one is a Schottky diode with a single 50 mm P⁺ ring between the edge termination and the active area. The two other diodes are JBS with a 3 mm P⁺ strips separated by 4 mm and 8 mm respectively. The breakdown voltage ranges from 2.7kV up to 3.7kV depending on the P⁺/N area. The 3 different diodes exhibit a similar on-resistance versus the temperature behavior. Moreover, no contribution of the bipolar conduction is observed and no degradation has been observed when a forward stress is performed in forward mode and also in reverse.

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Periodical:

Materials Science Forum (Volume 806)

Pages:

117-120

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.806.117

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Online since:

October 2014

Authors:

Pierre Brosselard*, Florian Chevalier, Benjamin Proux, Nicolas Thierry-Jebali, Pascal Bevilacqua, Dominique Tournier, Dominique Planson, Gregory Grosset, Lionel Dupuy

Keywords:

4H-SiC, Junction Barrier Schottky (JBS) Diode, Schottky Diode

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References

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