Formation of Graphene onto Atomically Flat 6H-SiC

Gemma Rius; Narcis Mestres; Yayoi Tanaka; Hidetoshi Miyazaki; Osamu Eryu; Philippe Godignon

doi:10.4028/www.scientific.net/MSF.778-780.1158

Paper Titles

Electrical Nanocharacterization of Epitaxial Graphene/Silicon Carbide Schottky Contacts
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Carrier Mobility as a Function of Temperature in as-Grown and H-Intercalated Epitaxial Graphenes on 4H-SiC
p.1146

Stability and Reactivity of [11-20] Step in Initial Stage of Epitaxial Graphene Growth on SiC(0001)
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Optimizing the Vacuum Growth of Epitaxial Graphene on 6H-SiC
p.1154

Formation of Graphene onto Atomically Flat 6H-SiC
p.1158

Solid Phase Growth of Graphene on Silicon Carbide by Nickel Silicidation: Graphene Formation Mechanisms
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Backside Monitoring of Graphene on Silicon Carbide by Raman Spectroscopy
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Ion-Beam Irradiation Effect in the Growth Process of Graphene on Silicon Carbide-on-Insulator Substrates
p.1170

Commercialization of High 600V GaN-on-Silicon Power Devices
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HomeMaterials Science ForumMaterials Science Forum Vols. 778-780Formation of Graphene onto Atomically Flat 6H-SiC

Formation of Graphene onto Atomically Flat 6H-SiC

Abstract:

SiC crystal is a wide band gap material of high hardness and chemical inertness. Graphene is nowadays a ubiquitous 2D material that would revolutionize many applications. Combining the characteristics of SiC and graphene higher performance and efficiency are expected, e.g. for high frequency electronic devices. The obtaining of graphene directly on SiC substrates by a single step thermal decomposition process is promising, but optimal standardized conditions are not established. We present the use of chemical-mechanical polishing (CMP) as a pre-graphene growth SiC conditioning to enable deep comprehension of the mechanisms of SiC decomposition and control towards selective formation of graphene.

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Silicon Carbide and Related Materials 2013

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Periodical:

Materials Science Forum (Volumes 778-780)

Pages:

1158-1161

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.778-780.1158

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Online since:

February 2014

Authors:

Gemma Rius*, Narcis Mestres, Yayoi Tanaka, Hidetoshi Miyazaki, Osamu Eryu, Philippe Godignon

Keywords:

Atomic Step, Chemo-Mechanical Polishing (CMP), Graphene, Graphitization, Nucleation, Terrace, Thermal Treatment

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References

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