Measurements and Simulations of Lateral PNP Transistors in a SiC NPN BJT Technology for High Temperature Integrated Circuits
p.758
p.758
A Molded Package Optimized for High Voltage SiC-Devices
p.762
p.762
Local Electrical Properties of the 4H-SiC(0001)/Graphene Interface
p.769
p.769
The Formation of an Epitaxial-Graphene Cap Layer for Post-Implantation High Temperature Annealing of SiC and its In Situ Removal by Si-Vapor Etching
p.777
p.777
Nanobaguettes Single Epitaxial Graphene Layers on SiC(11-20)
p.781
p.781
High Temperature Graphene Formation on Capped and Uncapped SiC
p.785
p.785
Observations on C-Face SiC Graphene Growth in Argon
p.789
p.789
Influence of Intercalated Silicon on the Transport Properties of Graphene
p.793
p.793
Temperature Dependent Structural Evolution of Graphene Layers on 4H-SiC(0001)
p.797
p.797
Nanobaguettes Single Epitaxial Graphene Layers on SiC(11-20)
Abstract:
You might also be interested in these eBooks
Info:
Periodical:
Materials Science Forum (Volumes 679-680)
Pages:
781-784
Citation:
Online since:
March 2011
Keywords:
Price:
Permissions: