Paper Titles

Emission Phenomenon Observation of Thermal Oxides Grown on N-Type 4H-SiC (0001) Wafer
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Effect of Increased Oxide Hole Trap Density due to Nitrogen Incorporation at the SiO₂/SiC Interface on F-N Current Degradation
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Energy Band Structure of SiO₂/4H-SiC Interfaces and its Modulation Induced by Intrinsic and Extrinsic Interface Charge Transfer
p.386

Improving Doping Efficiency of P⁺ Implanted Ions in 4H-SiC
p.393

Simulation of the Incomplete Ionization of the n-Type Dopant Phosphorus in 4H-SiC, Including Screening by Free Carriers
p.397

Effects of Process Variations on Silicon Carbide Devices for Extreme Environments
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Two-Dimensional Modeling of Aluminum-Ion Implantation into 4H-SiC
p.405

DLTS Measurements on 4H-SiC JBS-Diodes with Boron Implanted Local P-N Junctions
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Impact of Surface Morphology on the Electrical Properties of Al/Ti Ohmic Contacts on Al-Implanted 4H-SiC
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HomeMaterials Science ForumMaterials Science Forum Vols. 679-680Simulation of the Incomplete Ionization of the...

Simulation of the Incomplete Ionization of the n-Type Dopant Phosphorus in 4H-SiC, Including Screening by Free Carriers

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Abstract:

The simulation of the incomplete ionization of substitutional dopants in Silicon Carbide (SiC) is often performed using Boltzmann statistics and ionization energy values that do not depend on free carrier concentrations. But in the case of heavy doping Fermi-Dirac statistics is needed, while the case of an inhomogeneous dopants distribution or that of an excess carrier injection requires local free carrier concentration-dependent impurity ionization energies. Here a model for describing partial ionization from diluted to high homogeneous doping densities in SiC and in thermal equilibrium is presented and compared with results on Phosphorus doped 4H-SiC.

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Silicon Carbide and Related Materials 2010

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Periodical:

Materials Science Forum (Volumes 679-680)

Pages:

397-400

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.679-680.397

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Online since:

March 2011

Authors:

Raffaele Scaburri, Agostino Desalvo, Roberta Nipoti

Keywords:

Coulomb Screening, Incomplete Ionization, Ionization Energy, Simulation

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