Electrical Parameters of Bulk 3C-SiC Crystals Determined by Hall Effect, Magnetoresistivity, and Contactless Time-Resolved Optical Techniques

Patrik Ščajev; A. Mekys; P. Malinovskis; Jurgis Storasta; Masashi Kato; Kęstutis Jarašiūnas

doi:10.4028/www.scientific.net/MSF.679-680.157

Paper Titles

Evaluation of Curvature and Stress in 3C-SiC Grown on Differently Oriented Si Substrates
p.137

Raman Stress Characterization of Hetero-Epitaxial 3C-SiC Free Standing Structures
p.141

A Comparative Study of the Morphologies of Etch Pits in Semi-Insulating Silicon Carbide Single Crystals
p.145

Nondestructive Evaluation of Photo-Electrical Properties of 3C-SiC (111) Homoepitaxial Layers Grown by CVD
p.153

Electrical Parameters of Bulk 3C-SiC Crystals Determined by Hall Effect, Magnetoresistivity, and Contactless Time-Resolved Optical Techniques
p.157

Carrier Dynamics in Hetero- and Homo-Epitaxially Sublimation Grown 3C-SiC Layers
p.161

Structural and Optical Investigation of VLS Grown (111) 3C-SiC Layers on 6H-SiC Substrates in Sn-Based Melts
p.165

Optical Investigation of Defect Filtering Effects in Bulk 3C-SiC Crystals Grown by the CF-PVT Method Using a Necking Technique
p.169

Examination of Two P-Type 4H SiC Samples Having Similar Resistivity but Very Different Radiation Damage and Annealing Characteristics
p.173

HomeMaterials Science ForumMaterials Science Forum Vols. 679-680Electrical Parameters of Bulk 3C-SiC Crystals...

Electrical Parameters of Bulk 3C-SiC Crystals Determined by Hall Effect, Magnetoresistivity, and Contactless Time-Resolved Optical Techniques

Abstract:

The electrical and optical techniques have been applied for investigation of carrier transport and recombination features in thick free-standing 3C-SiC layers. Temperature dependencies of Hall mobility, magneto-resistivity, and conductivity indicated presence of high potential barriers, up to 0.4 eV. The carrier mobilities and equilibrium densities were calculated in the barrier and inter-barrier regions. Contactless measurements of the excess carrier ambipolar mobility and lifetime at 1016-18 cm-3 injection levels revealed carrier scattering solely by phonons in 80 – 800 K range. A correlation between the temperature dependencies of carrier lifetime and ambipolar mobility pointed out that diffusion-limited surface recombination at extended defects contributes significantly to the carrier lifetime.

You might also be interested in these eBooks

Silicon Carbide and Related Materials 2010

View Preview

Info:

Periodical:

Materials Science Forum (Volumes 679-680)

Pages:

157-160

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.679-680.157

Citation:

Cite this paper

Online since:

March 2011

Authors:

Patrik Ščajev, A. Mekys, P. Malinovskis, Jurgis Storasta, Masashi Kato, Kęstutis Jarašiūnas

Keywords:

Carrier Lifetime, Cubic Silicon Carbide (3C-SiC), Free Carrier Absorption, Hall Effect, Light Induced Diffraction Grating, Magnetoresistivity MR, Mobility

Export:

RIS, BibTeX

Price:

Permissions:

Request Permissions

References

[1] H. Nagasawa et al, In: Silicon Carbide: Recent major advances, eds. W.J. Choyke, H. Matsunami and G. Pensl, Springer, New York (2004), pp.207-228.

DOI: 10.1007/978-3-642-18870-1

Google Scholar

[2] G. D' Arrigo, A. Severino et al.: Mater. Sci. Forum Vol. 645-648 (2010), p.135.

Google Scholar

[3] J. Hassan et al.: Mater. Sci. Forum Vol. 645-648 (2010), p.83.

Google Scholar

[4] F.C. Beyer, S. Leone, C. Hemmingsson, A. Henry and E. Janzén: E-MRS 2010 Spring meeting, Symposium F, paper Mo-1. 2.

Google Scholar

[5] J. Hassan, P. Scajev, K. Jarasiunas, M. Kato, A. Henry, and J. P. Bergman: Technical Program of Electronic Materials Conference EMC-2010, South Bend, IN, USA paper O4.

Google Scholar

[6] K. Neimontas, T. Malinauskas et al.: Semicond. Sci. Technol. Vol. 21 (2006), p.52.

Google Scholar

[7] P. Ščajev, V. Gudelis, K. Jarašiūnas, and P.B. Klein: J. Appl. Phys. Vol. 108 (2010), p.023705.

Google Scholar

[8] P. Blood and J.W. Orton: The Electrical Characterization of Semiconductors: Majority Carriers and Electron States, Academic Press (1992).

Google Scholar

[9] C. Herring: J. Appl. Phys. Vol. 31 (1960), p. (1939).

Google Scholar

[10] P.B. Klein et al.: J. Appl. Phys. Vol. 108 (2010), p.033713.

Google Scholar

[11] J. Pernot et al.: J. Appl. Phys. Vol. 90 (4) (2001), p.1869.

Google Scholar

[12] G. Manolis, K. Jarašiūnas et al.: Mater. Sci. Forum Vol. 615-617, (2009), p.303.

Google Scholar