System Improvements of Photovoltaic Inverters with SiC-Transistors

Dirk Kranzer; Florian Reiners; Christian Wilhelm; Bruno Burger

doi:10.4028/www.scientific.net/MSF.645-648.1171

Paper Titles

A Step Toward High Temperature Intelligent Power Modules Using 1.5kV SiC-BJT
p.1155

Fabrication and Testing of 4H-SiC MESFETs for Analog Functions Circuits
p.1159

Mixed Mode Modeling and Characterization of a 4H-SiC Power DMOSFET Based DC-DC Power Converter
p.1163

SiC JFETs for Power Module Applications
p.1167

System Improvements of Photovoltaic Inverters with SiC-Transistors
p.1171

Discussion of Turn on Current Peaks of SiC Switches in Half Bridges
p.1177

AlN Substrates and Epitaxy Results
p.1183

Free Standing AlN Single Crystal Grown on Pre-Patterned and In Situ Patterned 4H-SiC Substrates
p.1187

Growth of Nanocrystalline Translucent h-BN Films Deposited by CVD at High Temperature on SiC Substrates
p.1191

HomeMaterials Science ForumMaterials Science Forum Vols. 645-648System Improvements of Photovoltaic Inverters with...

System Improvements of Photovoltaic Inverters with SiC-Transistors

Abstract:

In this paper the system improvements of PV-inverters with SiC-transistors are demonstrated. The basic characteristics of engineering prototypes of normally-off SiC-JFETs and SiC-MOSFETs were measured and their differences in the application are considered. To demonstrate the improvement in PV-inverter performance, a 5 kW single-phase and a three-phase full bridge inverter with normally-off SiC-JFETs were developed at Fraunhofer ISE. Different switching frequencies up to 144 kHz were applied and the impact on production costs and inverter performance was rated under the aspects of an industrial product development. This means, the influences on the efficiency and power density. In this work, a world record in PV-inverter efficiency of 99 % was achieved in a single-phase inverter and for the three-pase inverter, the power density was tripled with respect to commercially available state of the art PV-inverters.

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Periodical:

Materials Science Forum (Volumes 645-648)

Pages:

1171-1176

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.645-648.1171

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Online since:

April 2010

Authors:

Dirk Kranzer, Florian Reiners, Christian Wilhelm, Bruno Burger

Keywords:

Normally Off, Photovoltaic Inverter

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References

[1] D. Kranzer, B. Burger, Application of Silicon Carbide Transistors in Photovoltaic Inverters", article released in "Silicon Carbide - Current Trends in Research and Applications, October 2009, Editors: P. Friedrich, T. Kimoto, L. Ley, G. Pensl, Wiley-VCH ISBN 978-3-527-40953.

DOI: 10.1002/9783527629077.ch14

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[2] B. Burger, D. Kranzer, O. Stalter, Cost Reduction of PV-Inverters with SiC-DMOSFETs, CIPS, 11-18 March 2008, Nürnberg, Germany.

DOI: 10.4028/www.scientific.net/msf.600-603.1231

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[3] B. Burger, D. Kranzer, O. Stalter, Efficiency Improvement of PV-Inverters with SiCDMOSFETs, Mater. Sci. Forum Vols. 600-603 (2009), p.1231.

DOI: 10.4028/www.scientific.net/msf.600-603.1231

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