Characterization of 4H-SiC–SiO2 Interfaces by a Deep Ultraviolet Spectroscopic Ellipsometer

H. Seki; T. Wakabayashi; Yasuto Hijikata; Hiroyuki Yaguchi; Sadafumi Yoshida

doi:10.4028/www.scientific.net/MSF.615-617.505

Paper Titles

Model Calculation of SiC Oxide Growth Rate Based on the Silicon and Carbon Emission Model
p.489

Atomistic Scale Modeling and Analysis of Sodium Enhanced Oxidation of Silicon Carbide
p.493

Interface States in 4H- and 6H-SiC MOS Capacitors: A Comparative Study between Conductance Spectroscopy and Thermal Dielectric Relaxation Current Technique
p.497

Characterization of the SiO₂/SiC Interface with Impedance Spectroscopy
p.501

Characterization of 4H-SiC–SiO₂ Interfaces by a Deep Ultraviolet Spectroscopic Ellipsometer
p.505

Observation of SiC Oxidation in Ultra-Thin Oxide Regime by In Situ Spectroscopic Ellipsometry
p.509

4H-SiC Oxide Characterization with SIMS Using a ¹³C Tracer
p.513

Transient Currents Induced in 6H-SiC MOS Capacitors by Oxygen Ion Incidence
p.517

Electrical Characterization of MOS Structures with Deposited Oxides Annealed in N₂O or NO
p.521

HomeMaterials Science ForumMaterials Science Forum Vols. 615-617Characterization of 4H-SiC–SiO2 Interfaces by a...

Characterization of 4H-SiC–SiO₂ Interfaces by a Deep Ultraviolet Spectroscopic Ellipsometer

Abstract:

We have characterized 4H-SiC–oxide interfaces fabricated by thermal oxidation of SiC using spectroscopic ellipsometry in the wide spectral range from visible to deep UV region. It was found that there exists an interface layer, around 1 nm in thickness, regardless of the oxide thickness from 15 nm to 40 nm. The optical constants of the interface layer have similar spectral dependence to those of SiC, though the absolute value of the refractive indices is 0.5–1 larger than that of SiC. We have discussed the structure of the interface layer based on the oxidation mechanism of SiC, like the Si-emission model.