Graphene Layers on Silicon Carbide Studied by Raman Spectroscopy

Jonas Röhrl; Martin Hundhausen; Konstantin V. Emtsev; Thomas Seyller; Lothar Ley

doi:10.4028/www.scientific.net/MSF.600-603.567

Paper Titles

Mapping of Defects in Large-Area Silicon Carbide Wafers via Photoluminescence and its Correlation with Synchrotron White Beam X-Ray Topography
p.549

Imaging and Metrology of Silicon Carbide Wafers by Laser-Based Optical Surface Inspection System
p.553

Contactless Topographic Analysis of Locally Inhomogeneous Resistivity in SiC and Cd(Zn)Te
p.557

Evolution and Structure of Graphene Layers on SiC(0001)
p.563

Graphene Layers on Silicon Carbide Studied by Raman Spectroscopy
p.567

Dots Formation by CVD in the SiC-Si Hetero-System
p.571

Electronic Band Structure of Cubic Silicon Carbide Nanowires
p.575

Theoretical Comparison of 3C-SiC and Si Nanowire FETs in Ballistic Regime
p.579

Crystalline Recovery after Activation Annealing of Al Implanted 4H-SiC
p.585

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Graphene Layers on Silicon Carbide Studied by Raman Spectroscopy

Abstract:

We present a micro-Raman spectroscopy study on single- and few layer graphene (FLG) grown on the silicon terminated surface of 6H-silicon carbide (SiC). On the basis of the 2D-line (light scattering from two phonons close to the K-point in the Brillouin zone) we distinguish graphene mono- from bilayers or few layer graphene. Monolayers have a 2D-line consisting of only one component, whereas more than one component is observed for thicker graphene layers. Compared to the graphite the monolayer graphene lines are shifted to higher frequencies. We tentatively ascribe the corresponding phonon hardening to strain in the first graphene layer.