Simultaneous Determination of the Carrier Concentration, Mobility and Thickness of SiC Homo-Epilayers Using Terahertz Reflectance Spectroscopy

Shingo Oishi; Yasuto Hijikata; Hiroyuki Yaguchi; Sadafumi Yoshida

doi:10.4028/www.scientific.net/MSF.556-557.423

Paper Titles

Photoluminescence of 6H-SiC Nanostructures
p.407

Properties of Different Room-Temperature Photoluminescence Bands in 4H-SiC Substrates Investigated by Mapping Techniques
p.411

Raman Spectra of a 4H-SiC Epitaxial Layer on Porous and Non-Porous 4H-SiC Substrates
p.415

Reverse Biased Electrochemical Etching of SiC-SBD
p.419

Simultaneous Determination of the Carrier Concentration, Mobility and Thickness of SiC Homo-Epilayers Using Terahertz Reflectance Spectroscopy
p.423

Temperature Dependence of the Band-Edge Injection Electroluminescence of 3C-SiC pn Structure
p.427

The Premature Breakdown in 6H-SiC p-n Junction
p.431

Theory of the Stark Effect on the Donor Levels in 4H Silicon Carbide
p.435

Point Defects and their Aggregation in Silicon Carbide
p.439

HomeMaterials Science ForumMaterials Science Forum Vols. 556-557Simultaneous Determination of the Carrier...

Simultaneous Determination of the Carrier Concentration, Mobility and Thickness of SiC Homo-Epilayers Using Terahertz Reflectance Spectroscopy

Abstract:

We have simultaneously determined the carrier concentration, mobility, and thickness of 4H-SiC homo-epilayers with carrier concentration of 1016–1018 cm-3 from reflectance spectroscopy in the wavenumber range of 20–2000 cm-1. The spectra at 20–100 cm-1 and at 80–2000 cm-1 were measured by using the terahertz time domain spectrometer (THz-TDS) and the Fourier-transform infrared (FTIR) spectrometer, respectively. A modified classical dielectric function (MDF) model was employed for the curve fitting. We have compared the values of free carrier concentrations estimated from the reflectance spectroscopy with the net doping concentrations obtained from C–V measurements, and have discussed the validity of the electrical properties estimated from the reflectance spectroscopy.

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Periodical:

Materials Science Forum (Volumes 556-557)

Pages:

423-426

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.556-557.423

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Online since:

September 2007

Authors:

Shingo Oishi, Yasuto Hijikata, Hiroyuki Yaguchi, Sadafumi Yoshida

Keywords:

Capacitance to Voltage Measurement, Carrier Concentration, Hall-Effect Measurement, Homo-Epilayer, Infrared Reflectance Spectroscopy, Mobility, Terahertz Infrared Spectroscopy

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References

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