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HomeMaterials Science ForumMaterials Science Forum Vols. 492-493The Use of Functionally Graded Poly-SiGe Layers...

The Use of Functionally Graded Poly-SiGe Layers for MEMS Applications

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Abstract:

It is difficult to meet all the different material and economical requirements posed to a MEMS structural layer that can be integrated with the electronics on the same substrate using a single layer process. Therefore a multilayer process, which uses a combination of a CVD crystallization layer and a high-growth rate PECVD bulk layer was developed. High-quality films with excellent electrical and mechanical properties can be obtained at low temperature (#450°C) and high deposition rates (~100 nm/min). Fine-tuning of the stress gradient is accomplished by the use of a top stress compensation layer, whose optimal thickness was estimated from an evaluation of the stress gradient profile over thickness. These layers have been used for processing a 10 µm thick poly-SiGe gyroscope on top of a standard 0.35 µm CMOS process.

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Functionally Graded Materials VIII

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Periodical:

Materials Science Forum (Volumes 492-493)

Pages:

255-260

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.492-493.255

Citation:

Cite this paper

Online since:

August 2005

Authors:

A. Witvrouw, A. Mehta

Keywords:

Functionally Graded Material (FGM), Micro-Electromechanical System (MEMS), Poly-SiGe

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