High-Accuracy Lattice Constant Measurements of Electron-Irradiated 6H-SiC Single Crystals
p.289
p.289
Characterization of 3C-SiC/6H-SiC Heterostructures Grown by Vacuum Sublimation
p.293
p.293
Dynamics of 4H-SiC Plasticity
p.297
p.297
Time-Resolved Photoluminescence of Deep Centers in Semi-Insulating 4H-SiC
p.301
p.301
Identification of Dumb-Bell Shaped Interstitials in Electron Irradiated 6H SiC by Photoluminescence Spectroscopy
p.305
p.305
Photoluminescence Up-Conversion Processes in SiC
p.309
p.309
New Photoluminescence Features in 4H-SiC Induced by Hydrogenation
p.313
p.313
Analysis of Extended Defects in 6H-SiC Using Photoluminescence and Light Beam Induced Current Spectroscopy
p.317
p.317
Donor-Acceptor Pair Luminescence in 4H-SiC Doped with Nitrogen and Aluminum
p.321
p.321
Identification of Dumb-Bell Shaped Interstitials in Electron Irradiated 6H SiC by Photoluminescence Spectroscopy
Abstract:
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Info:
Periodical:
Materials Science Forum (Volumes 433-436)
Pages:
305-308
Citation:
Online since:
September 2003
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