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HomeKey Engineering MaterialsKey Engineering Materials Vol. 806An Analysis Approach to the Sapphire Crystals...

An Analysis Approach to the Sapphire Crystals Growth by Horizontal Directed Crystallization Method

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Abstract:

The model for sapphire crystals growth parameters estimation has been suggested. It can be served as a basis for the analysis of heat transfer processes during sapphire crystals obtaining. It allows to predict the bubbles, stresses and cracks appearing during sapphire crystals growth. We describe the results of the analysis and parameters estimation of sapphire crystals growth on all stages by horizontal directed crystallization method.

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Periodical:

Key Engineering Materials (Volume 806)

Pages:

203-208

DOI:

https://doi.org/10.4028/www.scientific.net/KEM.806.203

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Online since:

June 2019

Authors:

Yulia Klunnikova*, Sergey Malyukov, Alexandr Sayenko, Alexey V. Filimonov

Keywords:

Analytical Methods, Defect, Defects, Horizontal Directed Crystallization Method, Internal Stresses, Sapphire Crystals, Simulation

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* - Corresponding Author

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