Effect of Lattice Mismatch Strain Grading on the Electromechanical Behavior of Functionally Graded Quantum Dots

Peter L. Bishay; Bhavin Sampat; Jan Sladek; Ernian Pan; Vladimir Sladek

doi:10.4028/www.scientific.net/KEM.759.71

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HomeKey Engineering MaterialsKey Engineering Materials Vol. 759Effect of Lattice Mismatch Strain Grading on the...

Effect of Lattice Mismatch Strain Grading on the Electromechanical Behavior of Functionally Graded Quantum Dots

Abstract:

A fully coupled thermo-electro-mechanical models of cylindrical and truncated conical GaN/AlN Functionally Graded Quantum Dot (FGQD) systems with and without WL are analyzed in this study to determine the effect of lattice mismatch strain grading on the electromechanical behavior of the FGQD system. This has a technological and fundamental importance because the production methodology adopted for manufacturing QDs enables the composition of the QD material to be graded in the growth direction, so the material properties as well as the induced mismatch strain between the QD and the carrier matrix are accordingly graded. The power law is used to describe the grading function. Based on the obtained results, grading of material properties and lattice mismatch strain have significant effect on the distribution of the electromechanical quantities inside the QD and can be used as another tuning parameter in the design of QD systems.

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Periodical:

Key Engineering Materials (Volume 759)

Pages:

71-75

DOI:

https://doi.org/10.4028/www.scientific.net/KEM.759.71

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Online since:

January 2018

Authors:

Peter L. Bishay*, Bhavin Sampat, Jan Sladek, Ernian Pan, Vladimir Sladek

Keywords:

Finite Element Analysis (FEA), Piezoelectric, Semiconductor Nanostructures

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