[1]
H. Okinaka, T. Hata, Varistor, thermistor manufacturing in Japan, Am. Ceram. Soc. Bull. 62 (1995) 74.
Google Scholar
[2]
W. Heywang, Semiconducting barium titanate, J. Mater. Sci. 6(1971) 1214.
Google Scholar
[3]
A. Kanda, S. Tashiro, H. Igarashi, Effect of Firing Atmosphere on Electrical Properties of Multilayer Semiconducting Ceramics Having Positive Temperature Coefficient of Resistivity and Ni–Pd Internal Electrodes, J. Appl. Phys. 33 (1994) 5431.
DOI: 10.1143/jjap.33.5431
Google Scholar
[4]
D. R. Turner, H. A. Sauer, Processing of positive temperature coefficient thermistors, J. Electrochem. Soc. 107 (1960) 250.
Google Scholar
[5]
D.P. Canna, C.A. Randall, Electrode effects in positive temperature coefficient and negative temperature coefficient devices measured by complex-planeimpedance analysis, J. Appl. Phys. 80 (1996) 1628.
DOI: 10.1063/1.362961
Google Scholar
[6]
H. M. Landi, Electrodes for Ceramic Barium Titanate Type Semiconductors, J. Appl. Phys. 36(1965) (2000).
Google Scholar
[7]
S. H. Wemple, D. Kahng, C. N. Berglund, L. G. Van Uitert, Surface Barrier Junctions on Semiconducting Ferroelectrics, J. Appl. Phys. 38 (1967)799.
DOI: 10.1063/1.1709415
Google Scholar
[8]
S. H. Wemple, in Ohmic Contact to Semiconductors, edited by B. SchwartzThe Electrochemical Society. New York, (1969) 128.
Google Scholar
[9]
J. W. Fleming, H. M. O'Bryan, Low resistance contacts for semiconducting ceramics, Am. Ceram. Soc. Bull. 55(1976) 715-716.
Google Scholar
[10]
J. Narayan, V. N. Shukla, Formation of Ohmic contacts in semiconducting oxides,J. Appl. Phys. 51 (1980) 3444.
DOI: 10.1063/1.328032
Google Scholar
[11]
H. S. Maiti, R. N. Baus, Complex-plane impedance analysis for semiconducting barium titanate, Mater. Res. Bull. 21 (1986) 1107.
DOI: 10.1016/0025-5408(86)90227-8
Google Scholar
[12]
D. P. Cann, C. A. Randall, Electrode effects in positive temperature coefficient and negative temperature coefficient devices measured by complex-plane impedance analysis,J. Appl. Phys. 80 (1996) 1628.
DOI: 10.1063/1.362961
Google Scholar
[13]
A. Deguin, P. Mopetti, J. P. Boyeaux, Electrical properties of Nb doped BaTiO3 crystal with special emphasis on contact influence, Ferroelectrics26 (1980) 761.
DOI: 10.1080/00150198008008166
Google Scholar
[14]
M. A. A. Issa, Electrical properties of polycrystalline PTCR barium titanate, Mater. Sci. 27 (1992) 3685.
DOI: 10.1007/bf01151851
Google Scholar
[15]
Z. Surwiak, J. Dueek, Y. I. Goltzov, et al., The semiconductor properties on the system metal-semiconductive ferroelectric ceramics-metal, Ferroelectrics. 123 (1991) 19.
DOI: 10.1080/00150199108244709
Google Scholar
[16]
Z. W. Xiao, B. C. Yang, The new achievements in the study on mechanisms of foil surface area extended by electroetching, Electron Compon Mater. 16(1997) 1-11.
Google Scholar
[17]
D. Chakravarty, P. Singh, S. Singh, K. Devendra, O. Parkash, Electrical conduction behavior of high dielectric constant perovskite oxide LaxCa1-3x/2Cu3Ti4O12,J. Alloy. Compd. 438 (2007) 253-257.
DOI: 10.1016/j.jallcom.2006.08.024
Google Scholar
[18]
A.K. Jonscher, Dielectric Relaxation in Solids, Chelsea Dielectrics, London, (1983).
Google Scholar
[19]
J. Wu, J. Wang, Ferroelectric and Impedance Behavior of La- and Ti-Codoped BiFeO3 Thin Films, J. Am. Ceram. Soc. 93 (2010) 2795-2803.
DOI: 10.1111/j.1551-2916.2010.03816.x
Google Scholar