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Crystal Structures and Surface Morphologies of LaGaO3-Based Epitaxial Thin Films Grown by a Pulse Laser Deposition Method

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Abstract:

High-quality La0.84Sr0.16Ga0.26Mg0.74O3-δ (LSGM) epitaxial thin films were successfully grown on (100)-SrTiO3 (STO) substrates at a temperature of 800 °C by a pulsed laser deposition (PLD) method with KrF excimer laser pulses at an ozone pressure of 1.3 × 103 Pa. X-ray diffraction rocking curve measurements showed that the LSGM films had a full-width at half-maximum (FWHM) value of 0.11 °for out-of-plane 002 reflection, which was smaller than that reported for LaGaO3 films grown by atomic layer deposition methods (0.18 o). The reciprocal spaces mapping of 103 refraction showed that the LSGM films had a slightly larger lattice parameter a (out-of-plane) of 0.393 nm than a// (in-plane) of 0.391 nm.

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Periodical:

Key Engineering Materials (Volume 582)

Pages:

153-156

DOI:

https://doi.org/10.4028/www.scientific.net/KEM.582.153

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Online since:

September 2013

Authors:

Ayuko Matsunaga, Yuuki Kitanaka, Ryotaro Inoue, Yuji Noguchi, Masaru Miyayama, Kenji Itaka

Keywords:

Epitaxial, Film, LaGaO3, LSGM, Ozone, PLD, STO, X-Ray Diffraction (XRD)

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