Comparison of Nanosized Pattern of Calixarene and ZEP520 Resists by Using Energy Deposition Distribution
p.107
p.107
Effect of Salty Development on Forming HSQ Resist Nanodot Arrays with a Pitch of 15×15 nm2 by 30-keV Electron Beam Lithography
p.113
p.113
Fabrication of 30-nm-Pitched CoPt Magnetic Dot Arrays Using 30-keV-Electron Beam Lithography and Ion Milling for Patterned Media
p.118
p.118
Measurement of Coercive Force Enhanced by Nanometer-Sizing of Magnetic Dot by X-Ray Magnetic Circular Dichroism (XMCD)
p.122
p.122
Improved Observation Contrast of Block-Copolymer Nanodot Pattern Using Carbon Hard Mask (CHM)
p.126
p.126
Multi-Level Storage in Lateral Phase Change Memory: From 3 to 16 Resistance Levels
p.131
p.131
A Novel Phase Change Memory with a Separate Heater Characterized by Constant Resistance for Multilevel Storage
p.136
p.136
Growth of SiOx Nanowires by Simple Vapor Transport Method and their Optical Properties
p.141
p.141
Defect Detection in Optical Disk Substrate by Mach-Zehnder Interferometer
p.149
p.149
Improved Observation Contrast of Block-Copolymer Nanodot Pattern Using Carbon Hard Mask (CHM)
Abstract:
In this work, improvement of the observation contrast was investigated by using a carbon film as the hard mask for pattern transfer of block copolymer (BCP) nanodots. The PS-PDMS (Poly (styrene-b-dimethyl siloxane)) block copolymer was adopted here. The observation contrast was greatly improved after transferring block copolymer (BCP) nanodots pattern to the underlying Si substrate through the carbon hard mask compared that before nanodot pattern transfer. Pattern transfer was also demonstrated to be very effective using carbon hard mask.
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Info:
Periodical:
Key Engineering Materials (Volume 534)
Pages:
126-130
Citation:
Online since:
January 2013
Keywords:
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