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HomeJournal of Nano ResearchJournal of Nano Research Vol. 39Physical Insights on Charge Transport Mechanism...

Physical Insights on Charge Transport Mechanism and the LF Noise Behavior in Oxidized Si Structures with Ge Nanoclusters

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Abstract:

To ascertain physical mechanism of charge transport in Si/SiO_x structures with Ge nanoclusters the measurements of their DC and AC conductivity, and also the low-frequency measurements were performed. It was revealed that in the temperatures range 110 – 250 K the characteristics measured are governed by the hopping mechanism of charge transport. The model proposed suggests that the charge hopping becomes possible due to the band of localized states inducing in the bandgap of silicon substrate when Ge nanoclusters are introduced. The model was used to estimate some parameters of hopping transport. Also, the analysis of the low-frequency noise measured for Si/SiO_x structures with Ge nanoclusters allowed to ascertain the mechanism of charge hopping resulting in strong temperature dependence of the 1/f noise measured.

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Journal of Nano Research Vol. 39

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Periodical:

Journal of Nano Research (Volume 39)

Pages:

105-113

DOI:

https://doi.org/10.4028/www.scientific.net/JNanoR.39.105

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Online since:

February 2016

Authors:

Vladimir Lysenko, Y.V. Gomeniuk, Valeriya N. Kudina*, Nikolay Garbar, Sergey Kondratenko, Yurii N. Kozyrev

Keywords:

1/f Noise, AC Conductivity, DC Conductivity, Ge Nanoclusters, Hopping Conductivity, Si Substrate

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[1] A. Shklyaev, M. Ichikawa, Three-dimensional Si islands on Si(001) surfaces, Phys. Rev. B 65 (2001) 045307-6.

DOI: 10.1103/physrevb.65.045307

[2] V. Lysenko, Yu. Gomeniuk, Yu. Kozyrev, M. Rubezhanska, V. Sklyar, S. Kondratenko, Ye. Melnichuk, C. Teichert, Effect of Ge nanoislands on lateral photoconductivity of Ge-SiOx-Si structures, Advanced Materials Research 276 (2011) 179 – 186.

DOI: 10.4028/www.scientific.net/amr.276.179

[3] N. Ledentsov, V. Ustinov, V. Shchukin, P. Kop'ev, Zh. Alferov, D. Bimberg, Quantum dot heterostructures: Fabrication, properties, lasers (Review), Semiconductors 32 (1998) 343 – 365.

DOI: 10.1134/1.1187396

[4] D. Bimberg, M. Grundmann, N. Ledentsov, Quantum Dot Heterostructures, John Wiley & Sons, (1998).

[5] A. Shklyaev, M. Ichikawa, Extremely dense arrays of germanium and silicon nanostructures, Physics-Uspekhi 51 (2008) 133 – 161.

[6] V. Lysenko, S. Kondratenko, Yu. Kozyrev, M. Rubezhanska, V. Kladko, Yu. Gomeniuk, O. Gudymenko, Ye. Melnichuk, G. Grenet, N. Blanchard, Morphology and optical properties of tetragonal Ge nanoclusters grown on chemically oxidized Si(100) surfaces, Ukr. J. Phys. 57 (2012).

DOI: 10.1088/0268-1242/28/8/085009

[7] N.F. Mott, E.A. Davis, Electronic Processes in Non-Crystalline Materials, Clarendon-Press, Oxford, (1971).

[8] M. Pollak, T. H. Geballe, Low-frequency conductivity due to hopping processes in silicon, Phys. Rev. 122 (1961) 1742 – 1753.

DOI: 10.1103/physrev.122.1742

[9] N. Garbar, V. Kudina, V. Lysenko, S. Kondratenko, Yu. Kozyrev, Effect of Ge-nanoislands on the low-frequency noise in Si/SiOx/Ge structures, Advanced Materials Research 854 (2014) 21 – 27.

DOI: 10.4028/www.scientific.net/amr.854.21

[10] A.L. McWhorter, 1/f noise and related surface effects in germanium, Ph.D. dissertation, MIT, Cambridge, MA, (1955).

[11] F.N. Hooge, 1/f noise sources, IEEE Trans. Electron Devices 41 (1994) 1926-(1935).

DOI: 10.1109/16.333808

[12] D. McCammon, M. Galeazzi, D. Liu, W. Sanders, B. Smith, P. Tan, K. Boyce, R. Brekosky, J. Gygax, R. Kelley, D. Mott, F. Porter, C. Stahle, C. Stahle, A. Szymkowiak, 1/f noise and hot electron effects in variable range hopping conduction, Phys. Status Solidi B 230 (2002).

DOI: 10.1002/1521-3951(200203)230:1<1::aid-pssb1>3.0.co;2-z

[13] S. Kar, A. K. Raychaudhuri, A. Ghosh, H. v. Lohneysen, G. Weiss, Observation of non-Gaussian conductance fluctuations at low temperatures in Si: P(B) at the metal-insulator transition, Phys. Rev. Lett. 91 (2003) 216603 – 4.

DOI: 10.1103/physrevlett.91.216603

[14] N.F. Mott, Conduction in glasses containing transition metal ions, J. Non-Cryst. Solids 1 (1968) 1 – 17.

DOI: 10.1016/0022-3093(68)90002-1

[15] B.I. Shklovskii and A.L. Efros, Electronic Properties of Doped Semiconductors, Springer-Verlag Berlin Heidelberg, (1984).

[16] E. Kasper, K. Lyutovich, Properties of Silicon Germanium and SiGe: Carbon, Institution of Engineering & Technology, (1999).

[17] T. Ando, A.B. Fowler, F. Stern, Electronic properties of two-dimensional systems, Rev. Mod. Phys. 54 (1982) 437 – 672.

DOI: 10.1103/revmodphys.54.437

[18] B.I. Shklovskii, 1/f noise in variable range hopping conduction, Phys. Rev. B 67 (2003) 045201 – 6.

[19] V.I. Kozub, Low-frequency noise due to site energy fluctuations in hopping conductivity, Solid State Commun. 97 (1996) 843 – 846.

DOI: 10.1016/0038-1098(95)00621-4

[20] J.G. Massey, M. Lee, Low-frequency noise probe of interacting charge dynamics in variable-range hopping boron-doped silicon, Phys. Rev. Lett. 79 (1997) 3986 – 3989.

DOI: 10.1103/physrevlett.79.3986

[21] V. Pokrovskii, A. Savchenko, W. Tribe, E. Linﬁeld, Modulation origin of 1/f noise in two-dimensional hopping, Phys. Rev. B 64 (2001) 201318 – 4.

[22] B. I. Shklovskii, Theory of 1/f noise for hopping conduction, Solid State Commun. 33 (1980) 273 – 276.

DOI: 10.1016/0038-1098(80)91151-5

[23] M. Pollak and Z. Ovadyahu, Non-ergodic Dynamics of an Electron Glass, J. Physique 7 (1997) 1595 – 1602.

DOI: 10.1051/jp1:1997157

[24] A. Burin, B. Shklovskii, V. Kozub, Yu. Galperin, V Vinokur, Many electron theory of 1/f-noise in hopping conductivity, Phys. Stat. Sol. (c) 5 (2008) 800 – 808.

DOI: 10.1002/pssc.200777554