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Backside Illumination of an Electronic Photo Ionization Detector Realized by UV Transparent Thin Films

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Abstract:

LaB6/ITO films were prepared by magnetron sputtering technique on borosilicate glass substrates. The transmittance of ITO and LaB6/ITO films was analyzed by using UV/VIS spectrophotometer, whereby the sheet resistance of the ITO films was measured by four point probes. The effect of temperature and post-annealing processes on ITO film properties optimizing UV transparency and sheet resistance were investigated in detail. ITO films with an optimized thickness of 31 nm exhibited a low sheet resistance of 64 Ω/sq and a high ultraviolet transmittance of 81% at a wavelength of 365 nm. The additional LaB6 layer controls the UV transmittance behavior of the bilayer structure of LaB6/ITO by improving the photon absorption with thicker LaB6 films. The work function of LaB6 (32 nm)/ITO films with a value of 4.98 eV was measured by ultraviolet photoelectron spectroscopy (UPS).

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Journal of Nano Research Vol. 25 View Preview

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Periodical:

Journal of Nano Research (Volume 25)

Pages:

55-60

DOI:

https://doi.org/10.4028/www.scientific.net/JNanoR.25.55

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Cite this paper

Online since:

October 2013

Authors:

C.M. Zimmer, C. Asbeck, D. Lützenkirchen-Hecht, P. Glösekötter, K.T. Kallis

Keywords:

Deep UV Transparency, Indium Tin Oxide (ITO), Lanthanum Hexaboride, PID, Transparent Conductive Thin Film

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