Luminescence Properties of Ce3+ Doped Y3Al5O12 Phosphors Synthesized by Solution Combustion Method for White LEDs
p.63
p.63
Approaches to the Multicolor Tuning of Lanthanide-Ion Doped Upconversion Nanoparticles
p.69
p.69
A Comparison of Genetic Algorithm, Particle Swarm Optimization and Simulated Annealing in Real-Time Task Scheduling on CMP
p.77
p.77
Research on Linear Features Change Detection Based on Remote Sensing Image and Vector Data
p.83
p.83
A Hot-Carrier Damaged Indicator of MOSFETs by the Low Frequency Noise Measurement Technique
p.89
p.89
Entanglement Purification for Quantum Repeater
p.95
p.95
Amalgamated Criticality Analysis Methodology
p.101
p.101
UWB Based Detection with Fractional Fourier Transform
p.107
p.107
A WSN-Based Localization Scheme Considering the Reliability of RSSI Measurements
p.115
p.115
A Hot-Carrier Damaged Indicator of MOSFETs by the Low Frequency Noise Measurement Technique
Abstract:
In fact, the 1/f noise spectrum is correlated with the interface trap density of a MOSFET gate oxide, and the trap density generation in gate oxide is strong dependently on the hot-carrier injection. In this paper, we will investigate this phenomenon and compare with the threshold voltage shifted measured by the static I-V analysis. Eventually, it is found that the technique of the low frequency 1/f noise spectrum is an accurate and sensitive tool to detect the hot-carrier damage.
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Info:
Periodical:
Advanced Materials Research (Volume 679)
Pages:
89-94
Citation:
Online since:
April 2013
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