RF Characteristics of SiO2/HfO2/SiO2 MIM Capacitor

Hyuk Min Kwon; Sung Kyu Kwon; Woon Il Choi; Seung Yong Sung; Jong Kwan Shin; Chang Yong Kang; Raj Jammy; Hi Deok Lee

doi:10.4028/www.scientific.net/AMR.658.112

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HomeAdvanced Materials ResearchAdvanced Materials Research Vol. 658RF Characteristics of SiO2/HfO2/SiO2 MIM Capacitor

RF Characteristics of SiO₂/HfO₂/SiO₂ MIM Capacitor

Abstract:

RF characteristics of metal-insulator-metal (MIM) capacitors with SiO2/HfO2/SiO2 (SHS) were investigated using an equivalent circuit model that is associated with the main impedance ZMIM.cap and the substrate-related conductance Ysub. However, the parasitic capacitance in Ysub was lower than that of another element component in ZMIM.cap, which makes difficult for accurate RF modeling because the parasitic component was dominant at high frequency regions. As low parasitic component is eliminated from the modeling, the extracted capacitance for SHS MIM capacitor was stable up to 20 GHz. The Q-factor and resonant frequency (fr) point of SHS structure are 23.9 at 1 GHz and 9.76 GHz, respectively.

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Periodical:

Advanced Materials Research (Volume 658)

Pages:

112-115

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.658.112

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Online since:

January 2013

Authors:

Hyuk Min Kwon, Sung Kyu Kwon, Woon Il Choi, Seung Yong Sung, Jong Kwan Shin, Chang Yong Kang, Raj Jammy, Hi Deok Lee

Keywords:

High-K Dielectric, Metal-Insulator-Metal (MIM) Capacitor, Radio Frequency (RF), Reliability, Resonant Frequency

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References

[1] C. T. Black, K. W. Guarini, Y. Zhang, H. Kim, J. Benedict, E. Sikorski, I. V. Babich, and K. R. Milkove: IEEE Electron Device Lett., vol. 25 (2004), p.622–624.

DOI: 10.1109/led.2004.834637

Google Scholar

[2] H. Hu, C. Zhu, Y. F. Lu, M. F. Li, B. J. Cho, and W. K. Choi: IEEE Electron Device Lett., vol. 23 (2002), p.514–516.

Google Scholar

[3] S. B. Chen, C. H. Lai, A. Chin, J. C. Hsieh, and J. Liu: IEEE Electron Device Lett., vol. 23 (2002), p.185–187.

Google Scholar

[4] H. M. Kwon, I. S. Han, S. U. Park, J. D. Bok, Y. J. Jung, H. S. Shin, C. Y. Kang, B. H. Lee, R. Jammy, G. W. Lee, and H. D. Lee: Jpn. J. Appl. Phys., vol. 50 (2011), p. 04DD02-1–04DD02-3.

DOI: 10.7567/jjap.50.04dd02

Google Scholar

[5] T. Ishikawa, D. Kodama, Y. Matsui, M. Hiratani, T. Furusawa, and D. Hisamoto: in IEDM Tech. Dig. (2002).

Google Scholar

[6] X. Yu, C. Zhu, H. Hu, A. Chin, M. F. Li, B. J. Cho, D. -L. Kwong, F. D. Foo, and M. B. Yu: IEEE Electron Device Lett., vol. 24 (2003), p.63–65.

DOI: 10.1109/led.2002.808159

Google Scholar