Long Term Reliability and Power Degradation Analysis of Multicrystalline Silicon Solar Modules Using Electroluminescence Technique

Keh Moh Lin; Yang Hsien Lee; Wen Yeong Huang; Yi Wen Kuo; Li Kuo Wang; Sian Yi Yang

doi:10.4028/www.scientific.net/AMR.562-564.90

Paper Titles

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Corrosion of Biodegradable Implant Mg-2Ca-xZn Alloy in Simulated Body Fluid with the Addition of Zn
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Effect of the ZnO Buffer Layer Thickness on AZO Film Properties
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Kinetic Study for Ion Exchange of Taurine on D290 Anion Exchange Resin
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Long Term Reliability and Power Degradation Analysis of Multicrystalline Silicon Solar Modules Using Electroluminescence Technique
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Gold Nanoparticle Aggregates Preparation by (3-aminpopropyl)- Trimethoxysilane for Highly Active SERS Substrates
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Study on the Conductive Filament Formation of HfO₂
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Elastic Modulus of Tetrakaidecahedron Closed-Cell Cellular Materials
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Study on Forming Mechanism of Lamination Defect of AH36 Shipbuilding Plate Steel
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HomeAdvanced Materials ResearchAdvanced Materials Research Vols. 562-564Long Term Reliability and Power Degradation...

Long Term Reliability and Power Degradation Analysis of Multicrystalline Silicon Solar Modules Using Electroluminescence Technique

Abstract:

In this study, the quality degradation of multi-crystalline silicon photovoltaic (PV) modules during the aging process was observed by using electroluminescence (EL) technology and IV curve measurements in order to find out the occurring timing of damages on solar cells. The influences of soldering materials and temperatures on the performance of the PV modules were also studied. Experimental data show that, high soldering temperatures which induce high thermal stress can easily lead to the power loss of the PV modules. On PV modules soldered with SnAgPb (SAP) solder, ca. 40% of module damages occurred after 25 cycles during the thermal cycling (TC) test. In contrast, there were 61.5% of damaged SnPb (SP) modules after the 25 TC. Most module damages which are attributed to the crack growth and the floating solder emerged during the soldering and encapsulation processes. In our experiment, the average power degradation of all modules was less than 10%.