Comparison of Reactively Sputtered HfO2 and HfSixOy Dielectrics for High Density Metal-Insulator-Metal Capacitor Applications

Hui Xu; Li Feng Zhang; Qiu Xiang Zhang; Shi Jin Ding; Wei Zhang

doi:10.4028/www.scientific.net/AMR.284-286.893

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HomeAdvanced Materials ResearchAdvanced Materials Research Vols. 284-286Comparison of Reactively Sputtered HfO2 and...

Comparison of Reactively Sputtered HfO₂ and HfSi_xO_y Dielectrics for High Density Metal-Insulator-Metal Capacitor Applications

Abstract:

The reactively sputtered HfO₂ and HfSi_xO_y dielectrics have been investigated comparatively for metal-insulator-metal (MIM) capacitor applications. X-ray photoelectron spectroscopy analyses reveal the presence of Hf-O, Hf-O-Si and Si-O chemical bonds in the HfSi_xO_y films as well as lots of oxygen vacancies. The relative concentrations of Hf-O-Si and Si-O bonds increase with an increment of the power applied to the Si target. Further, it is found that the quadratic voltage coefficient of MIM capacitor decreases with increasing the Si content in the HfSi_xO_y dielectric in despite of a decrease in the resulting capacitance density. The HfSi_xO_y dielectric MIM capacitors with a capacitance density of ~8.4fF/μm² exhibit a quadratic voltage coefficient of 1840 ppm/V² at 100kHz, which is much smaller than 2750 ppm/V² for the HfO₂ dielectric MIM capacitors with a density of ~11.8fF/μm².

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Periodical:

Advanced Materials Research (Volumes 284-286)

Pages:

893-899

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.284-286.893

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Online since:

July 2011

Authors:

Hui Xu, Li Feng Zhang, Qiu Xiang Zhang, Shi Jin Ding, Wei Zhang

Keywords:

HfO₂, HfSi_XO_Y, Mim Capacitor, Reactively Sputtering

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