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New Compositionally-Ordered GeSi Nano Dots Fabricated with 1250 keV Electrons

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Abstract:

Transformation of uniformly strained GexSi1-x layers into GeSi dots of 3 ~ 7 nm which are compositionally ordered by one or concurrently two sets of {111} planes was carried out for the first time under non-equilibrium conditions induced by 1.25 MeV electron irradiation at Tc ≥ 200 oC in the high voltage electron microscope (JEM-ARM1300S). This microscope installed in the KBSI is characterized by an excellent point-to-point resolution of 0.12 nm allowing obtaining detailed information on chemical ordering at specific parameters of defocus (-800 Å) and crystal thickness (200~250 Å) determined by extensive HRTEM image simulation for the ordered dots.

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Info:

Periodical:

Advanced Materials Research (Volumes 26-28)

Pages:

1195-1198

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.26-28.1195

Citation:

Cite this paper

Online since:

October 2007

Authors:

Se Ahn Song, Liudmila I. Fedina, Hion Suck Baik, Youn Joong Kim, Young Min Kim, Anton K. Gutakovskii, Alexander V. Latyshev

Keywords:

Compositional Ordering, In Situ Electron Irradiation, SiGe Strained Films

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