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HomeAdvanced Materials ResearchAdvanced Materials Research Vols. 126-128A Review on the CMP of SiC and Sapphire Wafers

A Review on the CMP of SiC and Sapphire Wafers

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Abstract:

Chemo-mechanical polishing (CMP) has been a useful method to produce superior brittle wafer surfaces. This paper reviews the CMP of silicon carbide and sapphire wafers, focusing on efficiency of the polishing rate. The effects of slurry type, slurry pH value and mixed abrasives will be discussed in detail.

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Advances in Abrasive Technology XIII

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Periodical:

Advanced Materials Research (Volumes 126-128)

Pages:

429-434

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.126-128.429

Citation:

Cite this paper

Online since:

August 2010

Authors:

Yong Guang Wang, Liang Chi Zhang

Keywords:

Brittle Wafer, CMP, Sapphire, Silicon Carbide (SiC)

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