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Post-Annealing Temperature Effect on ZnO Nanostructures Growth on Porous Silicon

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Abstract:

In this study, ZnO nanostructures were synthesized on porous silicon (PSi) substrate using hydrothermal immersion method. Different post-annealing temperatures were varied from 300°C to 600°C. Surface morphology was studied by field emission scanning electron microscopy. It shows that a better shape was produce at annealing temperatures of 500°C. Structural studies of ZnO nanostructure were implemented using X-ray diffraction grating. The result shows post-annealing can influence the crystallinty of ZnO. Photoluminescence spectra were used to study the optical properties of ZnO nanostructure. The result shows that peak corresponds to ZnO nanostructures are appeared in UV range. Besides, broad peaks are also appeared in visible range which is attributed to structural defects and PSi substrate.

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Periodical:

Advanced Materials Research (Volume 1109)

Pages:

434-438

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.1109.434

Citation:

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Online since:

June 2015

Authors:

Kevin Alvin Eswar*, Mohd Husairi Fadzilah Suhaimi, Muzammil Mat Akhir, Nurul Afaah Abdullah, Nurul Afaah Abdullah, N.A.M. Asib, Ruziana Mohamed, Azlinda Aziz, Zuraida Khusaimi, Mohamad Rusop, Saifollah Abdullah

Keywords:

Hydrothermal Method, Porous Silicon, Post-Annealing Temperatures, Structural Properties, XRD, ZnO Nanostructures

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* - Corresponding Author

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