SiO2ZrO2 Thin Films as Low Temperature NO2 and O3 Sensors

T.N. Myasoedova; Victor V. Petrov; Nina K. Plugotarenko; Dmitriy V. Sergeenko; G.E. Yalovega; Mariya M. Brzhezinskaya; Evgeniya N. Shishlyanikova

doi:10.4028/www.scientific.net/AMR.1088.81

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HomeAdvanced Materials ResearchAdvanced Materials Research Vol. 1088SiO2ZrO2 Thin Films as Low Temperature NO2 and O3...

SiO₂ZrO₂ Thin Films as Low Temperature NO₂ and O₃ Sensors

Abstract:

Thin SiO₂ZrO₂ films were prepared, up to 0.2 μm thick, by means of the sol–gel technology and characterized by a Scanning electron microscopy and X-ray diffraction. It is shown the presence of monoclinic, cubic and tetragonal phases of ZrO₂in the SiO₂ matrix. The crystallites sizes depend on the annealing temperature of the film and amount to 35 and 56 nm for the films annealed at 773 and 973 K, respectively. The films resistance is rather sensitive to the presence of NO₂ and O₃ impurity in air at lower operating temperatures in the range of 30-60°C.

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Periodical:

Advanced Materials Research (Volume 1088)

Pages:

81-85

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.1088.81

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Online since:

February 2015

Authors:

T.N. Myasoedova*, Victor V. Petrov, Nina K. Plugotarenko, Dmitriy V. Sergeenko, G.E. Yalovega, Mariya M. Brzhezinskaya, Evgeniya N. Shishlyanikova

Keywords:

Gas Sensor, Nitrogen Oxides, Ozon, Thin Film, Zirconium Oxide

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* - Corresponding Author

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