Lattice Strain, Crystallite and Microstructure Studies of SiC Irradiated by Electron Beam

Yusof Abdullah; Mohd Reusmaazran Yusof; Nurazila Mat Zali; Megat Harun Al Rashid Megat Ahmad; Farah ‘Atiqah Abdul Azam

doi:10.4028/www.scientific.net/AMR.1087.439

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HomeAdvanced Materials ResearchAdvanced Materials Research Vol. 1087Lattice Strain, Crystallite and Microstructure...

Lattice Strain, Crystallite and Microstructure Studies of SiC Irradiated by Electron Beam

Abstract:

Silicon carbide (SiC) is an important material that has the potential to be used in the nuclear industry. The surface of 0001 silicon carbide, 4H polytype wafer has been irradiated by electron accelerator at the accelerator voltage of 3 MeV and 10 mA beam current. Samples were irradiated to dose received of 1000 kGy, 1500 kGy and 2000 kGy. Characterization of the samples have been done using X-ray diffraction (XRD) and scanning electron microscopy (SEM) to investigate the electron irradiation effect on structure as well as current-voltage tests to study electrical property.

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Periodical:

Advanced Materials Research (Volume 1087)

Pages:

439-442

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.1087.439

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Online since:

February 2015

Authors:

Yusof Abdullah*, Mohd Reusmaazran Yusof, Nurazila Mat Zali, Megat Harun Al Rashid Megat Ahmad, Farah ‘Atiqah Abdul Azam

Keywords:

Electron Irradiation, Lattice Strain, Microstructure, Silicon Carbide (SiC)

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* - Corresponding Author

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