Analysis of Chemical Action of Oxidants in Chemical Mechanical Polishing of SiC Crystal Substrate

Su Fang Fu; Jian Guo Yao; Li Jie Ma; Jian Xiu Su

doi:10.4028/www.scientific.net/AMR.1027.213

Paper Titles

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The Research of Extruded Pressure Auto-Adjustment Method in Abrasive Flow Polishing
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A Chemism Analysis of Alkali in the Chemical Mechnical Polishing Process of SiC Substrate
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Analysis of Chemical Action of Oxidants in Chemical Mechanical Polishing of SiC Crystal Substrate
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HomeAdvanced Materials ResearchAdvanced Materials Research Vol. 1027Analysis of Chemical Action of Oxidants in...

Analysis of Chemical Action of Oxidants in Chemical Mechanical Polishing of SiC Crystal Substrate

Abstract:

Chemical mechanical polishing (CMP) had been considered as the most practical and effective method of achieving an ultra-smooth and non-damage surface in manufacturing SiC crystal substrate. CMP slurry was one of the key factors of CMP technology. In this paper, through investigating the changes of several core factors to evaluate the performance of CMP, such as the material removal rate (MRR), surface roughness Ra, 3D surface profiler, etc., the influence of various slurry and its content on the polishing efficiency and surface finish quality had been studied. The research results showed that different oxidant had different chemical action mechanism, also affecting the stability of CMP slurry and surface quality of specimen; adding suitable an oxidant to slurry could effectively improve the CMP performance.

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Periodical:

Advanced Materials Research (Volume 1027)

Pages:

213-216

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.1027.213

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Online since:

October 2014

Authors:

Su Fang Fu, Jian Guo Yao, Li Jie Ma, Jian Xiu Su*

Keywords:

Chemical Mechanical Polishing, Material Removal Rate (MRR), Oxidant, SiC Crystal Substrate

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References

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