Atmospheric Pressure Helium Plasma Treatment on 3C-SiC/Si Surface

N.F. Mohd Nasir; Siti Khadijah Zaaba; Norsaidah Md Zuki; M.N.F.M. Kazim; Mazlee Mazalan; Yufridin Wahab; Patrick W. Leech; Philip Tanner; Anthony S. Holland

doi:10.4028/www.scientific.net/AMM.695.118

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HomeApplied Mechanics and MaterialsApplied Mechanics and Materials Vol. 695Atmospheric Pressure Helium Plasma Treatment on...

Atmospheric Pressure Helium Plasma Treatment on 3C-SiC/Si Surface

Abstract:

In this paper, the effect of inert gas plasma to the morphology of 0.29μm thick 3C-SiC/Si is studied. Helium was used for the plasma treatment and its effect as the etchant gas to the polished side of 3C-SiC/Si surface was determined. The changes of the surface morphology were monitored using Scanning Electron Microscopy (SEM) and Atomic Force Microscopy (AFM). From the results obtained, it has shown that the morphology of surface properties of 3C-SiC was modified by differences in helium plasma time of exposure and the degree of roughness of the surface changes. The results show by the SEM and AFM shown that plasma treatment had been successfully implemented for the 0.29μm thick 3C-SiC/Si.

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Periodical:

Applied Mechanics and Materials (Volume 695)

Pages:

118-121

DOI:

https://doi.org/10.4028/www.scientific.net/AMM.695.118

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Online since:

November 2014

Authors:

N.F. Mohd Nasir, Siti Khadijah Zaaba, Norsaidah Md Zuki, M.N.F.M. Kazim, Mazlee Mazalan, Yufridin Wahab, Patrick W. Leech, Philip Tanner, Anthony S. Holland

Keywords:

3C-SiC, Atomic Force Microscopy, Plasma Treatment, Scanning Electron Microscopy (SEM), Surface Modifications

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References

[1] J. A. Powell and L.G. Matus: Springer Proceedings in Physics. Vol. 34, p.2, (1989).

Google Scholar

[2] G. Kotzar, M. Freas, P. Abel, A. Fleischman, S. Roy, C. Zorman J.M. Moran, and J. Melzak: Biomaterials. Vol. 23, p.2737, (2002).

DOI: 10.1016/s0142-9612(02)00007-8

Google Scholar

[3] C.A. Zorman: Silicon carbide as a material for Biomedical Microsystems, EDA Publishing, Italy, (2009).

Google Scholar

[4] M. Mehregany, C. A Zorman, R. Rajan, C.H. Wu: Proc. IEEE. Vol 86, No. 8, p.1594, (1998).

Google Scholar

[5] R. Cheung, in: Silicon Carbide Microelectromechanical Systems for Harsh Environments, edited by R. Cheung, Imperial College Press, London, UK, p.1, (2006).

DOI: 10.1142/p426

Google Scholar

[6] P. H. Yih, V. Saxena, and A. J. Steckl: Phys. Status Solidi B. Vol. 202, p.605, (1997).

Google Scholar

[7] N. Mohd Nasir: Characterization of 3C-silicon carbide for advance applications, Doctoral dissertation, RMIT University, (2012).

Google Scholar

[8] N.F. Mohd Nasir, C.M. Shah, P.W. Leech, G.K. Reeves, E. Pirogova, T. Istivan, P. Tanner and A.S. Holland: International Conference on Biomedical Engineering (ICoBE). Vol, No., p.589, (2012).

DOI: 10.1109/icobe.2012.6178985

Google Scholar

[9] L. Wang, S. Dimitrijev, J. Han, A. Iacopi, L. Hold, P. Tanner, and H. B. Harrison: Thin Solid Films. Vol. 519, p.6443, (2011).

DOI: 10.1016/j.tsf.2011.04.224

Google Scholar

[10] L. Wang, S. Dimitrijev, J. Han, P. Tanner, A. Iacopi, and L. Hold: J. Cryst. Growth. Vol. 329, p.67, (2011).

Google Scholar

[11] I. Zubel, K. Rola, and M. Kramkowska. Sensor Actuat A-Phys. Vol. 171, p.436, (2011).

Google Scholar