Automatic Measurement and Modeling Implementation of Diode Reverse Recovery

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Abstract:

Diode reverse recovery current dissipation is the most important source of power dissipation for diodes used in fast switching converters or other power devices applications. As the reverse recovery current can peak at very high currents, this may cause the failures of other devices in the circuit. Therefore the Diode Reverse Recovery phenomena should no longer be ignored in device model and circuit simulations employing diodes. Automatic measurement of Diode Reverse Recovery time is becoming essential for mass production industrial process monitoring and device modeling. In this paper, a novel Sagittarius automatic Diode Reverse Recovery Time Measurement System was developed. This system has enabled the automation measurement and improved the measurement speed for about 5-7 times. A new Verilog A Diode Reverse Recovery model which can reflect the actual device characteristics was developed base on the data measured using this new system.

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1300-1304

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August 2013

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[1] N. Mohan, T. M Underland, W. P Robbins, Power Electronics: Converters, Applications An Design, NEW YORK, John Wiley and Sons Inc, (1998).

Google Scholar

[2] P. O Lauritzen and Cl L Ma, A simple diode model with reverse recovery, IEEE Trans. Power Electronics, vol. 6, no. 2, pp.188-191, (1991).

DOI: 10.1109/63.76804

Google Scholar

[3] S. Winternheimer and B. Laska, "Investigations of turn-off effects in fast recovery power diodes by modeling and simulation, IEE Proceedings – B, vol. 139, no. 2, pp.55-61, (1992).

DOI: 10.1049/ip-b.1992.0009

Google Scholar

[4] Y. C Liang, V. J Gosbell, Diode Forward and Reverse Recovery Model for Power Electronic SPICE simulations, IEEE Trans. Power Electronic, vol. 5, no. 3, pp.346-355.

DOI: 10.1109/63.56526

Google Scholar

[5] J. G. Linvill and J. F. Gibbons, Transistors and Active Circuits, New York: McGraw-Hill, 1961, p.92.

Google Scholar

[6] John Jovalusky, Reverse Recovery Charge, Current and Time, Qspeed Semiconductor, Rev. 1. 2 Apr., (2008).

Google Scholar

[7] Data taken on Qspeed Semiconductor's device characterization test fixture, Apr., (2007).

Google Scholar

[8] W. Shockley, W.T. Read, Statistics of the recombination of holes and electrons, Physical Review, Vol. 87, No. 5, pages 835-842, September, (1952).

DOI: 10.1103/physrev.87.835

Google Scholar

[9] Richard S. Muller, Theodore I. Kamins, Device Electronics for Integrated Circuits (second edition), John Wiley & Sons, Inc., 605 Third Avenue New York, New York 10158, pp.232-242, pp.250-251.

DOI: 10.4269/ajtmh.1986.35.3.tm0350030672a

Google Scholar

[10] Star-Hspice Manual, Release 2001. 2, June 2001, Avant! Corporation 46871 Bayside Parkway, Fremont, CA 94538.

Google Scholar

[11] Robert Boylestad, Louis Nashelsky, Electronic Devices and Circuit Theory Fifth Edition, Prentice Hall Englewood Cliffs, NJ 07632, Printed in the United States of America, ISBN 0-13-250994-6.

Google Scholar