Aspects of Surface Conditioning for High-Efficient Hetero-Junction Silicon Solar Cells

Lena Breitenstein; Kurt Ulrich Ritzau; Martin Hermle; Wilhelm Warta

doi:10.4028/www.scientific.net/SSP.195.318

Paper Titles

How to Overcome the Effects of Silicon Build-Up during Solar Cell Wet Chemical Processing
p.289

'Just Clean Enough': Wet Cleaning for Solar Cell Manufacturing Applications
p.293

Optimized Wet Processes and PECVD for High-Efficiency Solar Cells
p.297

Wet-Chemical Conditioning of H-Terminated Silicon Solar Cell Substrates Investigated by Surface Photovoltage Measurements
p.301

Combined Ozone/HF/HCI Based Cleaning and Adjusted Emitter Etch-Back for Silicon Solar Cells
p.305

Wet Chemical Oxidation of Silicon Surfaces Prior to the Deposition of All-PECVD AlO_x/a-SiN_x Passivation Stacks for Silicon Solar Cells
p.310

Surface Charge and Interface State Density on Silicon Substrates after Ozone Based Wet-Chemical Oxidation and Hydrogen-Termination
p.314

Aspects of Surface Conditioning for High-Efficient Hetero-Junction Silicon Solar Cells
p.318

Improved Surface Cleaning by In Situ Hydrogen Plasma for Amorphous/Crystalline Silicon Heterojunction Solar Cells
p.321

HomeSolid State PhenomenaSolid State Phenomena Vol. 195Aspects of Surface Conditioning for High-Efficient...

Aspects of Surface Conditioning for High-Efficient Hetero-Junction Silicon Solar Cells

Abstract:

As a high-efficiency silicon solar cell concept amorphous silicon/crystalline silicon (a-Si:H(n,p)/c-Si (p,n)) hetero-junction solar cells are of great scientific interest [1, . The a-Si:H emitter is deposited by plasma-enhanced chemical vapor deposition (PECVD). The biggest challenge is to avoid recombination at the a-Si:H(i)/c-Si interface where the p-n junction is located. A clean, smooth, hydrogen terminated c-Si surface is supposed to be mandatory for a high passivation quality of the deposited layer [3, 4]. It is well established that treatment in dilute hydrofluoric acid (dHF) solution (1-10%) produces a hydrogen-terminated, clean Si surface [e.g. 5, 6, 7]. H-termination is supposed to rise with increasing etch time [8]. Whereas prolonged rinsing after the etch step leads to a formation of OH-groups at the surface [8]. Because of the high sensitivity of the a-Si:H(i)/c-Si interface the influence of prolonged etching in dHF (1%) as well as prolonged rinsing in deionized water (DI water) on the passivation quality of the deposited a-Si:H(i) layer has to be carefully studied. Also the possibility of decreased hydrophobicity and a possible iron recontamination from the HF has been taken into account.

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Periodical:

Solid State Phenomena (Volume 195)

Pages:

318-320

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.195.318

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Online since:

December 2012

Authors:

Lena Breitenstein, Kurt Ulrich Ritzau, Martin Hermle, Wilhelm Warta

Keywords:

Amorphous Silicon, Hetero-Junction Solar Cells, High-Efficiency, Photovoltaics, Silicon-Solar Cells, Surface Conditioning, Wet-Chemical Cleaning

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